Publications of Michel Bockstedte

Journal Article (5)

Journal Article
Fuchs, M.; Bockstedte, M.; Pehlke, E.; Scheffler, M.: Pseudopotential study of binding properties of solids within generalized gradient approximations: The role of core-valence exchange correlation. Physical Review B 57 (4), pp. 2134 - 2145 (1998)
Journal Article
Bockstedte, M.; Kley, A.; Neugebauer, J.; Scheffler, M.: Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics. Computer Physics Communications 107 (1-3), pp. 187 - 222 (1997)
Journal Article
Bockstedte, M.; Scheffler, M.: Theory of Self-Diffusion in GaAs. Zeitschrift für Physikalische Chemie 200 (1-2), pp. 195 - 207 (1997)
Journal Article
Groß, A.; Bockstedte, M.; Scheffler, M.: Ab initio molecular dynamics study of the desorption of D2 from Si(100). Physical Review Letters 79 (4), pp. 701 - 704 (1997)
Journal Article
Moll, N.; Bockstedte, M.; Fuchs, M.; Pehlke, E.; Scheffler, M.: Application of generalized gradient approximations: The diamond-߭tin phase transition in Si and Ge. Physical Review B 52, pp. 2550 - 2556 (1995)

Conference Paper (1)

Conference Paper
Groß, A.; Bockstedte, M.; Scheffler, M.: Ab initio Molecular Dynamics Study of D2 Desorption from Si(100). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], pp. 951 - 954 (Ed. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, July 21, 1996 - July 26, 1996. World Scientific, Singapore (1996)

Thesis - PhD (1)

Thesis - PhD
Bockstedte, M.: Diffusion der Gallium-Leerstelle in Gallium-Arsenid. Dissertation, Universität, Erlangen-Nürnberg (1999)
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