Publications of Karsten Horn

Journal Article (161)

Journal Article
E. Rotenberg, W. Theis and K. Horn: Model simulations of momentum-resolved photoemission from quasicrystals. Journal of Alloys and Compounds 342 (1-2), 348–351 (2002).
Journal Article
F.J. Palomares, M. Serrano, A. Ruiz, F. Soria, K. Horn and M. Alonso: ARPES study of the surface states from Au/Ag(111): evolution with coverage and photon energy. Surface Science 513 (2), 283–294 (2002).
Journal Article
M.P. Casaletto, R. Zanoni, M. Carbone, M.N. Piancastelli, L. Aballe, K. Weiß and K. Horn: Methanol adsorption on Si(100)2x1 investigated by high-resolution photoemission. Surface Science 505 (1-3), 251–259 (2002).
Journal Article
L. Aballe, C. Rogero and K. Horn: Quantum size effects in ultrathin epitaxial Mg films on Si(111). Physical Review B 65 (12), 125319–1-125319–8 (2002).
Journal Article
S.R. Barman, C. Stampfl, P. Häberle, W. Ibanez, Y.Q. Cai and K. Horn: Collective excitations in alkali metals on Al(111). Physical Review B 64 (19), 195410 (2001).
Journal Article
P. Ebert, P. Quadbeck, K. Urban, B. Henninger, K. Horn, G. Schwarz, J. Neugebauer and M. Scheffler: Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors. Applied Physics Letters 79 (18), 2877–2879 (2001).
Journal Article
L. Aballe, C. Rogero, P. Kratzer, S. Gokhale and K. Horn: Probing interface electronic structure with overlayer quantum-well resonances: Al/Si(111). Physical Review Letters 87 (15), 156801 (2001).
Journal Article
Z. Song, J.I. Pascual, H. Conrad, K. Horn and H.-P. Rust: Surface states of d character imaged by scanning tunneling microscopy. Surface Science 491 (1-2), 39–47 (2001).
Journal Article
P. Häberle, W. Ibañez, S.R. Barman, Y.Q. Cai and K. Horn: Photoexcited collective modes in thin alkali layers adsorbed on Al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 182 (1-4), 102–108 (2001).
Journal Article
L. Aballe, C. Rogero, S. Gokhale, S.K. Kulkarni and K. Horn: Quantum-well states in ultrathin aluminium films on Si(111). Surface Science 482-485 (1), 488–494 (2001).
Journal Article
J.I. Pascual, Z. Song, J.J. Jackiw, K. Horn and H.-P. Rust: Visualization of surface electronic structure: dispersion of surface states of Ag(110). Physical Review B 63 (24), 241103 (2001).
Journal Article
D.A. Evans, H.J. Steiner, R. Middleton, T.S. Jones, C.-H. Chen, K. Horn, S. Park, T.U. Kampen, D. Tenne, D.R.T. Zahn, A. Patchett and I.T. McGovern: In-situ monitoring of the growth of copper phthalocyanine films on InSb by organic molecular beam deposition. Applied Surface Science 175-176, 374–378 (2001).
Journal Article
Z. Song, J.I. Pascual, H. Conrad, K. Horn and H.-P. Rust: Imaging surface electronic structure of NiAl(110) using low-temperature scanning tunneling microscopy. Applied Physics A 72 (2), 159–163 (2001).
Journal Article
S.R. Barman, P. Häberle, K. Horn, J.A. Maytorena and A. Liebsch: Quantum well behavior without confining barrier observed via dynamically screened photon field. Physical Review Letters 86 (22), 5108–5111 (2001).
Journal Article
M.P. Casaletto, R. Zanoni, M. Carbone, M.N. Piancastelli, L. Aballe, K. Weiss and K. Horn: Ethylene adsorption on Si(100)2×1: A high-resolution photoemission study. Physical Review B 62 (24), 17128–17133 (2000).
Journal Article
K. Horn: Photoemission studies of barrier heights in metal–semiconductor interfaces and heterojunctions. Applied Surface Science 166 (1-4), 1–11 (2000).
Journal Article
E. Rotenberg , W. Theis, K. Horn and P. Gille: Quasicrystalline valence bands in decagonal AlNiCo. Nature 406 (6796), 602–605 (2000).
Journal Article
M. Moreno, M. Alonso, M. Höricke, R. Hey, K. Horn, J.L. Sacedón and K.H. Ploog: Photoemission results on intralayer insertion at III-V/III-V junctions: A critical appraisal of the different interpretations. Journal of Vacuum Science and Technology B 18 (4), 2128–2138 (2000).
Journal Article
P. Ebert, K. Urban, L. Aballe, C.-H. Chen, K. Horn, G. Schwarz, J. Neugebauer and M. Scheffler: Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110). Physical Review Letters 84 (25), 5816–5819 (2000).
Journal Article
M. Moreno, M. Alonso , J.L. Sacedón, M. Höricke, R. Hey, K. Horn and K.H. Ploog: Si and Be intralayers at GaAs/AlAs and GaAs/GaAs junctions: Low-temperature photoemission measurements. Physical Review B 61 (23), 16060–16067 (2000).
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