Publications of M. Scheffler
All genres
Journal Article (600)
1984
Journal Article
, and M. Scheffler: Optical properties of As antisite and EL2 defects in GaAs. Physical Review Letters 52, 851–854 (1984).
Journal Article
M. Scheffler, , and : Electronic structure and identification of deep defects in GaP. Physical Review B 29, 3269–3282 (1984).
1983
Journal Article
, , M. Scheffler and : Multivacancies, interstitials, and self-interstitial migration in Si. Physica B 116, 18–27 (1983).
Journal Article
, M. Scheffler and : Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors. Physica B/C 117/118, 137–139 (1983).
1982
Journal Article
, , and M. Scheffler: Electronic structure of deep sp-bonded impurities in silicon. Physical Review B 26 (10), 5706–5715 (1982).
Journal Article
M. Scheffler, and : Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP. Physical Review Letters 49, 1765–1768 (1982).
Journal Article
and M. Scheffler: Determination of deep donor binding energies from their g-values. Journal of Physics C: Solid State Physics 15, L645–L650 (1982).
1981
Journal Article
M. Scheffler, , and : Identification and properties of native defects in GaP. Physical Review Letters 47, 413 (1981).
1980
Journal Article
and M. Scheffler: Photoemission and the electronic structure of a c(2x2) sulfur adsorbate-layer on Pd. Proceedings of the 4th International Conference on Solid Surfaces and the 3rd European Conf. on Surf. Sci., in press.
1979
Journal Article
M. Scheffler, K. Horn, A.M. Bradshaw and K. Kambe: Angular-resolved photoemission from physisorbed xenon. Surface science 80, 69–77 (1979).
Journal Article
A.M. Bradshaw and M. Scheffler: Lateral interactions in adsorbed layers. J. Vac. Sci. Tech. 16, 447–454 (1979).
Journal Article
, , K. Horn, K. Jacobi, A.M. Bradshaw, and M. Scheffler: Angular-resolved photoemission from an ordered oxygen overlayer on aluminium (111). Surface Science 89 (1-3), 327 (1979).
Journal Article
Journal Article
M. Scheffler: The influence of lateral interactions on the vibrational spectrum of adsorbed CO. Surface Science 81, 562–570 (1979).
1978
Journal Article
K. Horn, M. Scheffler and A.M. Bradshaw: Photoemission from physisorbed xenon: Evidence for lateral interactions. Physical Review Letters 41 (12), 822–825 (1978).
Journal Article
M. Scheffler, K. Horn, A.M. Bradshaw and : Photoemission from physisorbed xenon. Nederlands Tijdschrift voor Vacuumtechniek 10 (2/3/4), 85 (1978).
Journal Article
M. Scheffler, and : Angle-resolved photoemission from adsorbates: Theoretical considerations of polarization effects and symmetry. Solid State Communications 25, 93–99 (1978).
1977
Journal Article
K. Jacobi, M. Scheffler, and : Angle-resolved photoemission from the p(2x2) oxygen overlayer on Ni(001): Measurements and calculations. Solid State Communications 22, 17 (1977).
Journal Article
K. Jacobi, M. Scheffler, and : Angle-resolved photoemission of the oxygen overlayer on Ni(001): Part 2 (Experiments). Proc. 7th Int. Vac. Congr. & 3rd Conf. Sol. Surf. 2227 (1977).
Journal Article
and M. Scheffler: Electronic properties of strained bonds in amorphous silicon: The origin of the band-tail states. Proc. Optical Effects in Amorphous Semiconductors 1984, 379–385