Publications of Peter Kratzer
All genres
Journal Article (50)
2004
Journal Article
E. Penev, P. Kratzer and M. Scheffler: Atomic structure of the GaAs(001)-c(4 x 4) surface: first-principles evidence for diversity of heterodimer motifs. Physical Review Letters 93 (14), 146102–1-146102–4 (2004).
Journal Article
J. Márquez, P. Kratzer and K. Jacobi: Structure and morphology of the As-rich and the stoichiometric GaAs(114)A surface. Journal of Applied Physics 95 (12), 7645–7654 (2004).
Journal Article
H. Wu, M. Hortamani, P. Kratzer and M. Scheffler: First-principles study of ferromagnetism in epitaxial Si-Mn thin films on Si(001). Physical Review Letters 92, 23 (2004).
Journal Article
E. Penev, , P. Kratzer and M. Scheffler: Anisotropic diffusion of In adatoms on pseudomorphic InxGa1-xAs(001) films: First-principles total energy calculations. Physical Review B 69, 115335–1-115335–10 (2004).
2003
Journal Article
R. Santoprete, , , P. Kratzer, and M. Scheffler: Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots. Physical Review B 68, 235311–1-235311–9 (2003).
Journal Article
Y. Temko, T. Suzuki, P. Kratzer and K. Jacobi: InAs quantum dots grown on the GaAs(113)A and GaAs(-1-1-3)B surfaces: A comparative STM study. Physical Review B 68 (16), 165310–1-165310–12 (2003).
Journal Article
P. Kratzer, E. Penev and M. Scheffler: Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations. Applied Surface Science 216 (1-4), 436–446 (2003).
2002
Journal Article
L. Geelhaar, Y. Temko, J. Márquez, P. Kratzer and K. Jacobi: Surface structure of GaAs(2 5 11). Physical Review B 65 (15), 155308–1-155308–13 (2002).
Journal Article
, , P. Kratzer, and M. Scheffler: Quantum Monte Carlo calculations of H2 dissociation on Si(001). Physical Review Letters 89 (16), 166102 (2002).
Journal Article
P. Kratzer, E. Penev and M. Scheffler: First-principles studies of kinetics in epitaxial growth of III-V semiconductors. Applied Physics A 75, 79–88 (2002).
Journal Article
P. Kratzer and M. Scheffler: Reaction-limited island nucleation in molecular beam epitaxy of compound semiconductors. Physical Review Letters 88 (3), 036102 (2002).
2001
Journal Article
P. Kratzer and M. Scheffler: Surface Knowledge: Toward a Predictive Theory of Materials. Computing in Science & Engineering 3 (6), 16–25 (2001).
Journal Article
L. Aballe, C. Rogero, P. Kratzer, S. Gokhale and K. Horn: Probing interface electronic structure with overlayer quantum-well resonances: Al/Si(111). Physical Review Letters 87 (15), 156801 (2001).
Journal Article
E. Penev, P. Kratzer and M. Scheffler: Effect of strain on surface diffusion in semiconductor heteroepitaxy. Physical Review B 64 (8), 085401 (2001).
Journal Article
L.G. Wang, P. Kratzer, M. Scheffler and : Island dissolution during capping layer growth interruption. Applied Physics A 73 (2), 161–165 (2001).
Journal Article
, , P. Kratzer, E. Penev and M. Scheffler: The role of electronic correlation in the Si(100) reconstruction: a quantum Monte Carlo study. Physical Review Letters 87 (01), 016105 (2001).
Journal Article
L. Geelhaar, J. Márquez, P. Kratzer and K. Jacobi: GaAs(2511): A New Stable Surface within the Stereographic Triangle. Physical Review Letters 86 (17), 3815–3818 (2001).
Journal Article
J. Márquez, P. Kratzer, L. Geelhaar, K. Jacobi and M. Scheffler: Atomic structure of the stoichiometric GaAs(114) surface. Physical Review Letters 86 (1), 115–118 (2001).
2000
Journal Article
L.G. Wang, P. Kratzer and M. Scheffler: Energetics of InAs Thin Films and Islands on the GaAs(001) Substrate. Japanese Journal of Applied Physics 39 (7B), 4298–4301 (2000).
Journal Article
, , , , , P. Kratzer and M. Scheffler: A novel imaging mechanism to determine the atomic structure of the GaAs(001)-(2x4) surface. Omicron Newsletter 4, 4–5 (2000).