Publications of M. Scheffler

Book Chapter (26)

1993
Book Chapter
O. Pankratov and M. Scheffler: Clustering and Correlations on GaAs - Metal Interface. In: Semiconductor Interfaces at the Sub-Nanometer Scale. (Eds.): H.W.M. Salemink and M.D. Pashley. (NATO ASI Series E: Applied Sciences). Springer, Dordrecht, 121–126 (1993).
Book Chapter
U. Scherz and M. Scheffler: Density-functional theory of sp-bonded defects in III/V semiconductors. In: Imperfections in III/V Materials. (Ed.): E.R. Weber. (Semiconductors and Semimetals). Academic Press, Boston, 1–58 (1993).
1986
Book Chapter
M. Scheffler and U. Scherz: Resonant Raman scattering at point defects in GaAs. In: Defects in Semiconductors. (Ed.): H.J. von Bardeleben. (Materials Science Forum). Trans Tech Publications Ltd., Switzerland, 353–358 (1986).
Book Chapter
C.M. Weinert and M. Scheffler: Chalcogen and vacancy pairs in silicon: Electronic structure and stabilities. In: Defects in Semiconductors. (Ed.): H.J. von Bardeleben. (Materials Science Forum). Trans Tech Publications Ltd., Switzerland, 25–30 (1986).
1983
Book Chapter
M. Scheffler and A.M. Bradshaw: The electronic structure of adsorbed layers. In: Adsorption at Solid Surfaces. (The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis). Elsevier, Amsterdam, 165–257 (1983).
1982
Book Chapter
M. Scheffler: Electronic structure of simple deep-level defects in semiconductors. In: Festkörperprobleme. (Ed.): P. Grosse. (Festkörperprobleme). Vieweg, Braunschweig, 115–148 (1982).

Proceedings (1)

1996
Proceedings
Scheffler, M. and R. Zimmermann (Eds.): 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996. World Scientific, Singapore (1996).

Conference Paper (27)

2014
Conference Paper
C. Baldauf, M. Ropo, V. Blum and M. Scheffler: How mono-valent cations bend peptide turns and a first-principles database of amino acids and dipeptides. In: Proceedings of the International Conference of Computational Methods in Sciences and Engineering 2014: (ICCMSE 2014). (Eds.): T.E. Simos, Z. Kalogiratou, and T. Monovasilis. (AIP Conference Proceedings). AIP Publishing, Melville, NY, 119–120 (2014).
2009
Conference Paper
N. Mulakaluri, R. Pentcheva, W. Moritz, M. Weiland and M. Scheffler: Theoretical evidence of a mixed adsorption mode of water on Fe3O4(001). In: Geochimica et Cosmochimica Acta., A913–A913 (2009).
2008
Conference Paper
N. Buecking, S. Butscher, M. Richter, C. Weber, S. Declair, M. Woerner, K. Reimann, P. Kratzer, M. Scheffler and A. Knorr: Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases. In: Proceedings of SPIE., 689209 (2008).
2005
Conference Paper
R. Santoprete, B. Koiller, R.B. Capaz, P. Kratzer and M. Scheffler: Strain effects on the electronic and optical properties of InAs/GaAs quantum dots: Tight-binding study. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. (Eds.): J. Menendez and C.G. Van de Walle. (AIP Conference Proceedings). American Institute of Physics, USA, 745–746 (2005).
Conference Paper
H. Wu, P. Kratzer and M. Scheffler: Ab initio study of transition-metal silicide films on Si(001). In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. (Eds.): J. Menendez and C.G. Van de Walle. (AIP Conference Proceedings). American Institute of Physics, USA, 311–312 (2005).
Conference Paper
J.M. Carlsson and M. Scheffler: Curvature effects on vacancies in nanotubes. In: Electronic Properties of Novel Nanostructures. (Eds.): H. Kuzmany, J. Fink, M. Mehring, and S. Roth. (AIP Conference Proceedings). American Institute of Physics, Melville, New York, 432–435 (2005).
Conference Paper
R. Pentcheva, F. Wagner, W. Moritz and M. Scheffler: Structure, energetics and properties of Fe3O4(001) from first principles. In: High Performance Computing in Science and Engineering, Munich 2004. (Eds.): S. Wagner, W. Hanke, A. Bode, and F. Durst. Springer, Berlin, 375–381 (2005).
Conference Paper
C. Ratsch, A. Fielicke, J. Behler, M. Scheffler, G.von Helden and G. Meijer: Structure determination of small metal clusters by density-functional theory and comparison with experimental far-infrared spectra. In: Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show. (Nanotech 2005)., 1–4 (2005).
2000
Conference Paper
M. Scheffler, P. Kratzer and L.G. Wang: Ab initio thermodynamics and statistics of semiconductor growth, and self-assembly of quantum dots. In: Proceedings of the 4th Symposium on Atom-Scale Surface and Interface Dynamics., 3–7 (2000).
1999
Conference Paper
F. Grosse, A. Kley, M. Scheffler and R. Zimmermann: Self-organized growth on V-grooved substrates. In: Proc. 24th Int. Conf. on the Physics of Semiconductors. (Ed.): D. Gershoni. World Scientific, Singaporein press
Conference Paper
F. Grosse, J. Neugebauer and M. Scheffler: Phase stability and segregation of In_xGa_1-xN alloys. In: Proceedings 24th International Conference on the Physics of Semiconductors 1999. (Ed.): G. David. World Scientific, Singaporein press
Conference Paper
J. Neugebauer, T.K. Zywietz, M. Scheffler and J.E. Northrup: Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. (Ed.): D. Gershoni. World Scientific, Singapore, 235–242 (1999).
1997
Conference Paper
A. Groß and M. Scheffler: Steering and Isotope Effects in the Dissociative Adsorption of H2/Pd(100). In: Frontiers in Materials Modelling and Design: Proceedings of the Conference on Frontiers in Materials Modelling and Design, Kalpakkam, 20–23 August 1996. (Eds.): V. Kumar, S. Sengupta, and B. Raj. Springer, Berlin, 285–292 (1997).
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