Publikationen von Catherine Stampfl

Stampfl, C.; Neugebauer, J.; Scheffler, M.: Theoretical evidence for unusual bonding geometry and phase transitions of Na on Al(001). Surface Review and Letters 1 (2-3), S. 213 - 219 (1994)

Stampfl, C.; Scheffler, M.: Theoretical identification of a (2 x 2) composite double layer ordered surface alloy of Na on Al(111). Surface Science 319 (1-2), S. L23 - L28 (1994)

Stampfl, C.; Scheffler, M.; Over, H.; Burchhardt, J.; Nielsen, M.; Adams, D. D.; Moritz, W.: LEED structural analysis of Al(111)-K(√3 x √3)R30°: Identification of stable and metastable adsorption sites. Physical Review B 49 (7), S. 4959 - 4972 (1994)

Stampfl, C.; Burchhardt, J.; Nielsen, M.; Adams, D. L.; Scheffler, M.; Over, H.; Moritz, W.: The structure of Al(111)-K-(√3 × √3)R30° determined by LEED: stable and metastable adsorption sites. Surface Science 287/288, S. 418 - 422 (1993)

Stampfl, C.; Kambe, K.; Riley, J. D.; Lynch, D. F.: Angle-resolved photoemission theory for valence electrons: I. A calculation scheme by the multi-slice method. Journal of Physics: Condensed Matter 5, S. 8211 - 8224 (1993)

Stampfl, C.; Kambe, K.; Riley, J. D.; Lynch, D. F.: Calculation of the complex bulk and surface state bandstructure using the multislice matrix method. Journal of Physics: Condensed Matter 4, S. 8461 - 8476 (1992)

Stampfl, C.; Scheffler, M.; Over, H.; Burchhardt, J.; Nielsen, M.; Adams, D.; Moritz, W.: Identification of stable and metastable adsorption sites for K adsorbed on Al(111). Physical Review Letters 69 (10), S. 1532 - 1535 (1992)

Reuter, K.; Stampfl, C.; Scheffler, M.: Ab initio atomistic thermodynamics and statistical mechanics of surface properties and functions. In: Handbook of Materials Modeling, S. 149 - 194 (Hg. Yip, S.). Springer, Dordrecht (2005)

Scheffler, M.; Stampfl, C.: Theory of Adsorption on Metal Substrates. In: Electronic Structure, S. 286 - 356 (Hg. Horn, K.; Scheffler, M.). Elsevier, Amsterdam (2000)

Van de Walle, C. G.; Neugebauer, J.; Stampfl, C.: Native defects, impurities, and doping in GaN and related compounds: general remarks. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, S. 275 - 280 (Hg. Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.) (1999)

Van de Walle, C. G.; Neugebauer, J.; Stampfl, C.: Native point defects in GaN and related compounds. In: Properties, processing and applications of gallium nitride and related semiconductors, S. 281 - 283 (Hg. Edgar, J. H.; Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.). INSPEC, London (1999)

Stampfl, C.: Surface Processes and Phase Transitions from Ab Initio Atomistic Thermodynamics and Statistical Mechanics. Habilitation, Technisch Universität Berlin, Berlin (2006)