Publikationen von Karsten Horn

Paggel, J.; Theis, W.; Horn, K.; Jung, C.; Hellwig, C.; Petersen, H.: Correlation of surface core levels and structural building blocks for the Si(111)-7×7 reconstruction through high-resolution core-level spectroscopy. Physical Review B 50 (24), S. 18 686 - 18 689 (1994)

Öfner, H.; Hofmann, R.; Kraft, J.; Netzer, F. P.; Paggel, J.; Horn, K.: Metal-overlayer-induced charge-transfer effects in thin SiO₂-Si structures. Physical Review B 50 (20), S. 15 120 - 15 126 (1994)

Chassé, T.; Paggel, J.; Neuhold, G.; Theis, W.; Horn, K.: Photoemission study of the Cs⧸GaP(110) interface at low temperatures. Surface Science 307-309 (A), S. 295 - 302 (1994)

Evans, D.A.; Horn, K.: Quantisation of valence states observed in small Ag islands on the GaAs(110) surface. Surface Science 307-309 (A), S. 321 - 327 (1994)

Chassé, T.; Theis, W.; Chen, T.P.; Evans, D.A.; Horn, K.; Pettenkofer, C.; Jaegermann, W.: Interface chemistry and band bending induced by Pt deposition onto GaP(110). Surface Science 251-252, S. 472 - 477 (1991)

Maierhofer, C.; Kulkarni, S.; Alonso, M.; Reich, T.; Horn, K.: Valence band offset in ZnS layers on Si(111) grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B 9 (4), S. 2238 - 2243 (1991)

Zahn, D. R. T.; Maierhofer, C.; Winter, A.; Reckzügel, M.; Srama, R.; Thomas, A.; Horn, K.; Richter, W.: The growth of cubic CdS on InP(110) studied in situ by Raman spectroscopy. Journal of Vacuum Science and Technology B 9 (4), S. 2206 - 2211 (1991)

Henle, W. A.; Ramsey, M. G.; Netzer, F. P.; Horn, K.: Reversible Eu²⁺ ↔ Eu³⁺ transitions at Eu‐Si interfaces. Applied Physics Letters 58 (15), S. 1605 - 1607 (1991)

van Acker, J. F.; Weijs, P. J. W.; Fuggle, J. C.; Horn, K.; Haak, H.; Buschow, K. H. J.: Photoemission investigation of the electronic structure of Fe-Pd and Fe-Pt alloys. Physical Review B 43 (11), S. 8903 - 8910 (1991)

Alonso, M.; Cimino, R.; Horn, K.: Surface photovoltage effects in photoemission from metal/GaP(110) interfaces: Temperature‐dependent Fermi level movement. Journal of Vacuum Science and Technology A 9 (3), S. 891 - 897 (1991)

Horn, K.: Semiconductor interface studies using core and valence level photoemission. Applied Physics A 51, S. 289 - 304 (1990)

Alonso, M.; Cimino, R.; Horn, K.: Surface photovoltage effects in photoemission from metal-GaP(110) interfaces: Importance for band bending evaluation. Physical Review Letters 64 (16), S. 1947 - 1950 (1990)

Wilke, W. G.; Seedorf, R.; Horn, K.: Valence band offset and interface chemistry of II–VI epitaxial layers grown on the (110) surface of III–V materials. Journal of Crystal Growth 101 (1-4), S. 620 - 627 (1990)

Alonso, M.; Cimino, R.; Horn, K.; Chasse, T.; Braun, W.: Temperature-dependent interface formation study of aluminium on GaP(110). Vacuum 41 (4-6), S. 1025 - 1028 (1990)

Alonso, M.; Cimino, R.; Maierhofer, C.; Chasse, T.; Braun, W.; Horn, K.: Schottky barrier heights and interface chemistry in Ag, In, and Al overlayers on GaP(110). Journal of Vacuum Science and Technology B 8, S. 955 - 963 (1990)

Chasse, T.; Alonso, M.; Cimino, R.; Horn, K.; Braun, W.: Indium interaction with GaP (110): example of an unreacted interface. Vacuum 41 (4-6), S. 835 - 838 (1990)

Wilke, W. G.; Maierhofer, C.; Horn, K.: Test of band offset commutativity by photoemission from an in situ grown ZnTe/CdS/ZnTe quantum well. Journal of Vacuum Science and Technology B 8 (4), S. 760 - 767 (1990)

Scheffler, M.; Horn, K.; Bradshaw, A. M.; Kambe, K.: Angular-resolved photoemission from physisorbed xenon. Surface science 80, S. 69 - 77 (1979)

Hoffmann, P.; Muschwitz, C. v.; Horn, K.; Jacobi, K.; Bradshaw, A. M.; Kambe, K.; Scheffler, M.: Angular-resolved photoemission from an ordered oxygen overlayer on aluminium (111). Surface Science 89 (1-3), S. 327 (1979)

Horn, K.; Scheffler, M.; Bradshaw, A. M.: Photoemission from physisorbed xenon: Evidence for lateral interactions. Physical Review Letters 41 (12), S. 822 - 825 (1978)