Publikationen von Haiyuan Wang

Park, S.; Wang, H.; Schultz, T.; Shin, D.; Ovsyannikov, R.; Zacharias, M.; Maksimov, D.; Meissner, M.; Hasegawa, Y.; Yamaguchi, T. et al.; Kera, S.; Aljarb, A.; Hakami, M.; Li, L.-J.; Tung, V.; Amsalem, P.; Rossi, M.; Koch, N.: Temperature-Dependent Electronic Ground-State Charge Transfer in van der Waals Heterostructures. Advanced Materials 33 (29), 2008677 (2021)

Jacobs, M.; Krumland, J.; Valencia, A. M.; Wang, H.; Rossi, M.; Cocchi, C.: Ultrafast charge transfer and vibronic coupling in a laser-excited hybrid inorganic/organic interface. Advances in Physics: X 5 (1), 1749883 (2020)

Zhao, L.; Lin, N.; Han, Z.; Li, X.; Wang, H.; Cui, J.: Regulation of the Crystal Structure Leading to the Bandgap Widening and Phonon Scattering Increasing in Cu₃SnS₄‐Cu₃SbSe₃ Chalcogenides. Advanced Electronic Materials 5 (10), 1900485 (2019)

Wang, H.; Levchenko, S. V.; Schultz, T.; Koch, N.; Scheffler, M.; Rossi, M.: Modulation of the Work Function by the Atomic Structure of Strong Organic Electron Acceptors on H‐Si(111). Advanced Electronic Materials 5 (5), 1800891 (2019)

Park, D.; Rees, G. J.; Wang, H.; Rata, D.; Morris, A. J.; Maznichenko, I. V.; Ostanin, S.; Bhatnagar, A.; Choi, C.; Jónsson, R. D. B. et al.; Kaufmann, K.; Kashtiban, R.; Walker, M.; Chiang, C.; Thorsteinsson, E. B.; Luo, Z.; Park, I.; Hanna, J. V.; Mertig, I.; Dörr, K.; Gíslason, H. P.; McConville, C. F.: Electromagnetic Functionalization of Wide‐Bandgap Dielectric Oxides by Boron Interstitial Doping. Advanced Materials 30 (39), 1802025 (2018)