Publikationen von Peter Kratzer

Márquez, J., P. Kratzer und K. Jacobi: Structure and morphology of the As-rich and the stoichiometric GaAs(114)A surface. Journal of Applied Physics 95 (12), 7645–7654 (2004).

Penev, E., P. Kratzer und M. Scheffler: Atomic structure of the GaAs(001)-c(4 x 4) surface: first-principles evidence for diversity of heterodimer motifs. Physical Review Letters 93 (14), 146102–1-146102–4 (2004).

Penev, E., S. Stojkovic, P. Kratzer und M. Scheffler: Anisotropic diffusion of In adatoms on pseudomorphic In_xGa_1-xAs(001) films: First-principles total energy calculations. Physical Review B 69, 115335–1-115335–10 (2004).

Wu, H., M. Hortamani, P. Kratzer und M. Scheffler: First-principles study of ferromagnetism in epitaxial Si-Mn thin films on Si(001). Physical Review Letters 92, 23 (2004).

Kratzer, P., E. Penev und M. Scheffler: Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations. Applied Surface Science 216 (1-4), 436–446 (2003).

Santoprete, R., B. Koiller, R.B. Capaz, P. Kratzer, Q.K.K. Liu und M. Scheffler: Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots. Physical Review B 68, 235311–1-235311–9 (2003).

Temko, Y., T. Suzuki, P. Kratzer und K. Jacobi: InAs quantum dots grown on the GaAs(113)A and GaAs(-1-1-3)B surfaces: A comparative STM study. Physical Review B 68 (16), 165310–1-165310–12 (2003).

Filippi, C., S.B. Healy, P. Kratzer, E. Pehlke und M. Scheffler: Quantum Monte Carlo calculations of H₂ dissociation on Si(001). Physical Review Letters 89 (16), 166102 (2002).

Geelhaar, L., Y. Temko, J. Márquez, P. Kratzer und K. Jacobi: Surface structure of GaAs(2 5 11). Physical Review B 65 (15), 155308–1-155308–13 (2002).

Kratzer, P., E. Penev und M. Scheffler: First-principles studies of kinetics in epitaxial growth of III-V semiconductors. Applied Physics A 75, 79–88 (2002).

Kratzer, P. und M. Scheffler: Reaction-limited island nucleation in molecular beam epitaxy of compound semiconductors. Physical Review Letters 88 (3), 036102 (2002).

Aballe, L., C. Rogero, P. Kratzer, S. Gokhale und K. Horn: Probing interface electronic structure with overlayer quantum-well resonances: Al/Si(111). Physical Review Letters 87 (15), 156801 (2001).

Geelhaar, L., J. Márquez, P. Kratzer und K. Jacobi: GaAs(2511): A New Stable Surface within the Stereographic Triangle. Physical Review Letters 86 (17), 3815–3818 (2001).

Healy, S.B., C. Filippi, P. Kratzer, E. Penev und M. Scheffler: The role of electronic correlation in the Si(100) reconstruction: a quantum Monte Carlo study. Physical Review Letters 87 (01), 016105 (2001).

Kratzer, P. und M. Scheffler: Surface Knowledge: Toward a Predictive Theory of Materials. Computing in Science & Engineering 3 (6), 16–25 (2001).

Márquez, J., P. Kratzer, L. Geelhaar, K. Jacobi und M. Scheffler: Atomic structure of the stoichiometric GaAs(114) surface. Physical Review Letters 86 (1), 115–118 (2001).

Penev, E., P. Kratzer und M. Scheffler: Effect of strain on surface diffusion in semiconductor heteroepitaxy. Physical Review B 64 (8), 085401 (2001).

Wang, L.G., P. Kratzer, M. Scheffler und Q.K.K. Liu: Island dissolution during capping layer growth interruption. Applied Physics A 73 (2), 161–165 (2001).

LaBella, V.P., D.W. Bullock, Z. Ding, C. Emery, P.M. Thibado, P. Kratzer und M. Scheffler: A novel imaging mechanism to determine the atomic structure of the GaAs(001)-(2x4) surface. Omicron Newsletter 4, 4–5 (2000).

Wang, L.G., P. Kratzer, N. Moll und M. Scheffler: Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate. Physical Review B 62, 1897–1904 (2000).