Publikationen von Karsten Horn

Rotenberg , E., W. Theis, K. Horn und P. Gille: Quasicrystalline valence bands in decagonal AlNiCo. Nature 406 (6796), 602–605 (2000).

Wolfframm, D., D.A. Evans, G. Neuhold und K. Horn: Gold and silver Schottky barriers on ZnS(110). Journal of Applied Physics 87 (8), 3905–3911 (2000).

Barman, S.R. und K. Horn: Photoemission study of electronic excitations at clean metal surfaces and thin metal films. Applied Physics A 69, 519–527 (1999).

Baumgärtel, P., J. Paggel, M. Hasselblatt, K. Horn, V. Fernandez, O. Schaff, J.H. Weaver, A.M. Bradshaw, D.P. Woodruff, E. Rotenberg und J. Denlinger: Structure determination of the (√3×√3)R30° boron phase on the Si(111) surface using photoelectron diffraction. Physical Review B 59 (20), 13014–13019 (1999).

Barman, S.R., S.A. Ding, G. Neuhold, K. Horn, D. Wolfframm und D.A. Evans: Electronic band structure of zinc blende. Physical Review B 58 (11), 7053–7058 (1998).

Barman, S.R., P. Häberle und K. Horn: Collective and single-particle excitations in the photoyield spectrum of Al. Physical Review B 58 (8), R4285–R4288 (1998).

Barman, S.R., K. Horn, P. Häberle, H. Ishida und A. Liebsch : Photoinduced plasmon excitations in alkali-metal overlayers. Physical Review B 57 (11), 6662–6665 (1998).

Carbon, M., M.N. Piancastelli, J.J. Paggel, C. Weindel und K. Horn: A high-resolution photoemission study of ethanol adsorption on Si(111)-(7×7). Surface Science 412-413, 441–446 (1998).

Magnusson, K.O., G. Neuhold, K. Horn und D.A. Evans: Electronic band structure of cubic CdSe determined by angle-resolved photoemission: Cd 4d and valence-level states. Physical Review B 57 (15), 8945–8950 (1998).

Moreno, M., H. Yang, M. Höricke, M. Alonso, J.A. Martín-Gago, R. Hey, K. Horn, J.L. Sacedón und K.H. Ploog: Si intralayers at GaAs/AlAs and GaAs/GaAs junctions: Polar versus nonpolar interfaces. Physical Review B 57 (19), 12314–12323 (1998).

Neuhold, G., S.R. Barman, K. Horn, W. Theis, P. Ebert und K. Urban: Enhanced surface metallic density of states in icosahedral quasicrystals. Physical Review B 58 (2), 734–738 (1998).

Paggel, J., G. Neuhold, H. Haak und K. Horn: Growth morphology and electronic structure of Na films on Si(111)-(7×7) and Si(111)-Na(3×1). Surface Science 414 (1-2), 221–235 (1998).

Chassé, T., G. Neuhold, J. Paggel und K. Horn: Investigation of the Sn/GaP(110) interface by core level photoemission: interface reaction, growth morphology and surface photovoltage effects. Applied Surface Science 115 (4), 326–335 (1997).

Ding, S.A., S.R. Barman, K. Horn, H. Yang, B. Yang, O. Brandt und K. Ploog: Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy. Applied Physics Letters 70 (18), 2407–2409 (1997).

Ding, S.A., G. Neuhold, J.H. Weaver, P. Häberle, K. Horn, O. Brandt, H. Yang und K. Ploog: Electronic structure of cubic gallium nitride films grown on GaAs. Journal of Vacuum Science and Technology. A 14 (3), 819–824 (1996).

Drews, D., A. Schneider, K. Horn und D.R.T. Zahn: Raman monitoring of ternary compound formation: ZnS_xSe_{1 − x} on GaAs(100). Journal of Crystal Growth 159 (1-4), 152–155 (1996).

Neuhold, G., T. Chassé, J. Paggel und K. Horn: Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning. Physical Review B 54 (12), 8623–8626 (1996).

Schömann, S., K. Schmidt, H. Peisert, T. Chassé und K. Horn: Electronic and surfactant effects of As interlayers at AgInP (110) interfaces. Surface Science 352-354, 855–860 (1996).

Wolfframm, D., P. Bailey, D.A. Evans, G. Neuhold und K. Horn: Zinc sulfide on GaP(110): Characterization of epitaxial growth and electronic structure. Journal of Vacuum Science and Technology A 14 (3), 844–848 (1996).

Chassé, T., J. Paggel, G. Neuhold, W. Theis und K. Horn: Photoemission study of the Cs⧸GaP(110) interface at low temperatures. Surface Science 307-309 (A), 295–302 (1994).