Publikationen von Karsten Horn

Chang, J.Y., L. Moreschini, A. Bostwick, G.A. Gaines, Y.S. Kim, A.L. Walter, B. Freelon, A. Tebano, K. Horn und E. Rotenberg: Layer-by-Layer Evolution of a Two-Dimensional Electron Gas Near an Oxide Interface. Physical Review Letters 111 (12), 126401 (2013).

Chang, Y.J., G. Khalsa, L. Moreschini, A.L. Walter, A. Bostwick, K. Horn, A.H. MacDonald und E. Rotenberg: Uniaxial strain induced band splitting in semiconducting SrTiO₃. Physical Review B 87 (11), 115212 (2013).

Kim, K.S., A.L. Walter, L. Moreschini, T. Seyller, K. Horn, E. Rotenberg und A. Bostwick: Coexisting massive and massless Dirac fermions in symmetry-broken bilayer graphene. Nature Materials 12 (10), 887–892 (2013).

Walter, A.L., A. Bostwick, F. Speck, M. Ostler, K.S. Kim, Y.J. Chang, L. Moreschini, D. Innocenti, T. Seyller, K. Horn und E. Rotenberg: Small scale rotational disorder observed in epitaxial graphene on SiC(0001). New Journal of Physics 15 (2), 023019 (2013).

Martínez-Blanco, J., A. Mascaraque, Y. Dedkov und K. Horn: Ge(001) As a Template for Long-Range Assembly of π-Stacked Coronene Rows. Langmuir 28 (8), 3840–3844 (2012).

Nayak, J., M. Maniraj , A. Rai , S. Singh , P. Rajput, A. Gloskovskii, J. Zegenhagen , D.L. Schlagel , T.A. Lograsso, K. Horn und S.R. Barman : Bulk Electronic Structure of Quasicrystals. Physical Review Letters 109 (21), 216403 (2012).

Ostler, M., R.J. Koch, F. Speck, F. Fromm, H. Vita, M. Hundhausen, K. Horn und T. Seyller: Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation. Materials Science Forum 717-720, 649–652 (2012).

Sicot, M., P. Leicht, A. Zusan, S. Bouvron, O. Zander, M. Weser, Y. Dedkov, K. Horn und M. Fonin: Size-Selected Epitaxial Nanoislands Underneath Graphene Moiré on Rh(111). ACS nano 6 (1), 151–158 (2012).

Bostwick, A., J.L. McChesney, T. Ohta, K.V. Emtsev, T. Seyller, K. Horn und E. Rotenberg: The interaction of Xe and Xe + K with graphene. Journal of Electron Spectroscopy and Related Phenomena 183 (1-3), 118–124 (2011).

Böttcher, S., M. Weser, Y.S. Dedkov, K. Horn, E.N. Voloshina und B. Paulus: Graphene on ferromagnetic surfaces and its functionalization with water and ammonia. Nanoscale Research Letters 6, 214 (2011).

Dhaka, R.S., A.K. Shukla, K. Horn und S.R. Barman: Photoemission study of Al adlayers on Mn. Physical Review B 84 (24), 245404 (2011).

Voloshina, E.N., A.V. Generalov, M. Weser, S. Böttcher, K. Horn und Y. Dedkov: Structural and electronic properties of the graphene/Al/Ni(111) intercalation system. New Journal of Physics 13 (11), 113028 (2011).

Walter, A.L., A. Bostwick, K.-J. Jeon, F. Speck, M. Ostler, T. Seyller, L. Moreschini, J.Y. Chang, M. Polini, R. Asgari, A.H. MacDonald, K. Horn und E. Rotenberg: Effective screening and the plasmaron bands in Graphene. Physical Review B 84 (8), 085410 (2011).

Walter, A.L., K.-J. Jeon, A. Bostwick, F. Speck, M. Ostler, T. Seyller, L. Moreschini, Y.S. Kim, Y.J. Chang, K. Horn und E. Rotenberg: Highly p-doped epitaxial graphene obtained by fluorine intercalation. Applied Physics Letters 98 (18), 184102 (2011).

Walter, A.L., S. Nie, A. Bostwick, K.S. Kim, L. Moreschini, J.Y. Chang, D. Innocenti, K. Horn, K.F. McCarty und E. Rotenberg: Electronic structure of graphene on single-crystal copper substrates. Physical Review B 84 (19), 195443 (2011).

Weser, M., E.N. Voloshina, K. Horn und Y.S. Dedkov: Electronic structure and magnetic properties of the graphene/Fe/Ni(111) intercalation-like system. Physical Chemistry Chemical Physics 13 (16), 7534–7539 (2011).

Bostwick, A., T. Ohta, J.L. McChesney, K.V. Emtsev, F. Speck, T. Seyller, K. Horn, S.D. Kevan und E. Rotenberg: The interaction of quasi-particles in graphene with chemical dopants. New Journal of Physics 12, 125014 (2010).

Bostwick, A., F. Speck, T. Seyller, K. Horn, M. Polini, R. Asgari, A.H. MacDonald und E. Rotenberg: Observation of Plasmarons in Quasi-Freestanding Doped Graphene. Science 328 (5981), 999–1002 (2010).

Chang, Y.J., A. Bostwick, Y.S. Kim, K. Horn und E. Rotenberg: Structure and correlation effects in semiconducting SrTiO₃. Phyical Review B 81 (23), 235109 (2010).

Dil, J.H., B. Hülsen, T.U. Kampen, P. Kratzer und K. Horn: Influence of the substrate lattice structure on the formation of quantum well states in thin In and Pb films on silicon. Journal of Physics: Condensed Matter 22 (13), 135008 (2010).