Publications of Matthias Scheffler

Michaelides, A.; Scheffler, M.: An Introduction to the Theory of Crystalline Elemental Solids and their Surfaces. In: Surface and Interface Science: Concepts and Methods, Vol. 1, pp. 13 - 72 (Ed. Wandelt, K.). Wiley-VCH, Weinheim (2012)

Pentcheva, R.; Mulakaluri, N.; Moritz, W.; Pickett, W. E.; Kleinhenz, H.-G.; Scheffler, M.: Compensation mechanisms and functionality of transition metal oxide surfaces and Interfaces: A density functional theory study. In: High Performance Computing in Science and Engineering, pp. 709 - 717 (Eds. Wagner, S.; Steinmetz, M.; Bode, A.; Brehm, M.). Springer, Berlin (2009)

Schindlmayr, A.; Scheffler, M.: Quasiparticle calculations for point defects at semiconductor surfaces. In: Theory of Defects in Semiconductors, pp. 165 - 192 (Eds. Drabold, D. A.; Estreicher, S. K.). Springer, Berlin Heidelberg (2007)

Reuter, K.; Stampfl, C.; Scheffler, M.: Ab initio atomistic thermodynamics and statistical mechanics of surface properties and functions. In: Handbook of Materials Modeling, pp. 149 - 194 (Ed. Yip, S.). Springer, Dordrecht (2005)

Fichthorn, K. A.; Merrick, M. L.; Pentcheva, R.; Scheffler, M.: Island nucleation in metal thin-film growth. In: Atomistic Aspects of Epitaxial Growth, pp. 87 - 97 (Eds. Kotrla, M.; Papanicolaou, N. I.; Vvedensky, D.D.; Wille, L.T.). Kluwer, Dordrecht (2002)

Scheffler, M.; Kratzer, P.: Ab inito thermodynamics and statistical mechanics of diffusion, growth, and self-assembly of quantum dots. In: Atomistic Aspects of Epitaxial Growth, pp. 355 - 369 (Eds. Kotrla, M.; Papanicolaou, N.I.; Vvedensky, D.D.; Wille, L.T.). Kluwer, The Netherlands (2002)

Fichthorn, K. A.; Scheffler, M.: Substrate-mediated interaction on Ag(111) surfaces from first principles. In: Collective diffusion on surfaces: correlation effects and adatom interactions, pp. 225 - 236 (Eds. Tringides, M. C.; Chvoj, Z.). Kluwer, Dordrecht (2001)

Schwarz, G.; Neugebauer, J.; Scheffler, M.: Point defects on III-V semiconductor surfaces. In: Proceedings of the 25th International Conference on the Physics of Semiconductors: Osaka, Japan, September 17 - 22, 2000, pp. 1377 - 1380 (Eds. Miura, N.; Ando, T.). Springer, Berlin (2001)

Scheffler, M.; Stampfl, C.: Theory of Adsorption on Metal Substrates. In: Electronic Structure, pp. 286 - 356 (Eds. Horn, K.; Scheffler, M.). Elsevier, Amsterdam (2000)

Ratsch, C.; Ruggerone, P.; Scheffler, M.: Study of strain and temperature dependence of metal epitaxy. In: Morphological Organization in Epitaxial Growth and Removal, pp. 3 - 29 (Eds. Zhang, Z.; Lagally, M. G.). World Scientific, Singapore (1998)

Ratsch, C.; Ruggerone, P.; Scheffler, M.: Density-functional theory of surface diffusion and epitaxial growth of metals. In: Surface Diffusion: Atomistic and Collective Processes, pp. 83 - 101 (Ed. Tringides, M. C.). Springer, Berlin (1997)

Ruggerone, P.; Ratsch, C.; Scheffler, M.: Density-functional theory of epitaxial growth of metals. In: Growth and properties of ultrathin epitaxial layers, pp. 490 - 544 (Eds. King, D. A.; Woodruff, D. P.). Elsevier, Amsterdam (1997)

Scheffler, M.; Fiorentini, V.; Oppo, S.: Homoepitaxial growth of metals and the role of surfactants. In: Surface science: principles and current applications ; [based on invited lectures presented ... at the German-Australian Workshop on Surface Science held at Schloß Ringberg, Tegernsee, Germany, in January 1994], pp. 219 - 231 (Eds. MacDonald, R. J.; Taglauer, E. C.; Wandelt, K. R.). Springer, Berlin (1996)

Pankratov, O.; Scheffler, M.: Clustering and Correlations on GaAs - Metal Interface. In: Semiconductor Interfaces at the Sub-Nanometer Scale, pp. 121 - 126 (Eds. Salemink, H. W. M.; Pashley, M. D.). Springer, Dordrecht (1993)

Scherz, U.; Scheffler, M.: Density-functional theory of sp-bonded defects in III/V semiconductors. In: Imperfections in III/V Materials, pp. 1 - 58 (Ed. Weber, E. R.). Academic Press, Boston (1993)

Scheffler, M.; Scherz, U.: Resonant Raman scattering at point defects in GaAs. In: Defects in Semiconductors, pp. 353 - 358 (Ed. von Bardeleben, H.J.). Trans Tech Publications Ltd., Switzerland (1986)

Weinert, C. M.; Scheffler, M.: Chalcogen and vacancy pairs in silicon: Electronic structure and stabilities. In: Defects in Semiconductors, pp. 25 - 30 (Ed. von Bardeleben, H.J.). Trans Tech Publications Ltd., Switzerland (1986)

Scheffler, M.; Bradshaw, A. M.: The electronic structure of adsorbed layers. In: Adsorption at Solid Surfaces, pp. 165 - 257. Elsevier, Amsterdam (1983)

Scheffler, M.: Electronic structure of simple deep-level defects in semiconductors. In: Festkörperprobleme, pp. 115 - 148 (Ed. Grosse, P.). Vieweg, Braunschweig (1982)

Scheffler, M.; Zimmermann, R. (Eds.): 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996. 23rd International Conference on the Physics of Semiconductors, Berlin, Germany, July 21, 1996 - July 26, 1996. World Scientific, Singapore (1996), 3450 pp.