Publications of Matthias Scheffler

Yu, B. D.; Scheffler, M.: Anisotropy of growth of the close-packed surfaces of silver. Physical Review Letters 77 (6), pp. 1095 - 1098 (1996)

Berndt, W.; Weick, D.; Stampfl, C.; Bradshaw, A. M.; Scheffler, M.: Structural analysis of the two c(2x2) phases of Na adsorbed on Al(100). Surface Science 330 (2), pp. 182 - 192 (1995)

Becker, P.; Kütgens, U.; Stumpel, J.; Biernacki, S.; Scheffler, M.: The silicon-28 lattice parameter. PTB-Mitteilungen 105, pp. 95 - 98 (1995)

Burchhardt, J.; Nielsen, M. M.; Adams, D. L.; Lundgren, E.; Andersen, J. N.; Stampfl, C.; Scheffler, M.; Schmalz, A.; Aminpirooz, S.; Haase, J.: Formation and structural analysis of a surface alloy: Al(111)-(2 x 2)-Na. Physical Review Letters 74, pp. 1617 - 1620 (1995)

Finnis, M. W.; Kaschner, R.; Kruse, C.; Furthmüller, J.; Scheffler, M.: The interaction of a point charge with a metal surface: theory and calculations for (111), (100) and (110) aluminium surfaces. Journal of Physics: Condens. Matter 7, pp. 2001 - 2019 (1995)

Fiorentini, V.; Methfessel, M.; Scheffler, M.: Surface stress, relaxation and reconstruction in fcc transition metals. Vuoto XXIV, pp. 21 - 24 (1995)

Fiorentini, V.; Oppo, S.; Scheffler, M.: Towards an understanding of surfactant action on the epitaxial growth of metals: the case of Sb on Ag(111). Applied Physics A 60, pp. 399 - 402 (1995)

Furthmüller, J.; Kresse, G.; Hafner, J.; Stumpf, R.; Scheffler, M.: Site-selective adsorption of C atoms on Al(111) surfaces. Physical Review Letters 74 (25), pp. 5084 - 5087 (1995)

Groß, A.; Wilke, S.; Scheffler, M.: Six-dimensional quantum dynamics of adsorption and desorption of H_2 at Pd(100): Steering and steric effects. Physical Review Letters 75, pp. 2718 - 2721 (1995)

Hammer, B.; Scheffler, M.: Local chemical reactivity of a metal alloy surface. Physical Review Letters 74, pp. 3487 - 3490 (1995)

Hanbicki, A. T.; Baddorf, A. P.; Plummer, E. W.; Hammer, B.; Scheffler, M.: The interaction of hydrogen with the (110) surface of NiAl. Surface Science 331-333, pp. 811 - 817 (1995)

Kley, A.; Neugebauer, J.; Scheffler, M.: Interface stability and valence-band offsets for the GaAs/ZnSe(001) heterojunction. Proc.of the 22nd International Conference on the Physics of Semiconductors, pp. 775 - 782 (1995)

Kohler, B.; Ruggerone, P.; Wilke, S.; Scheffler, M.: Frustrated H-induced instability of Mo(110). Physical Review Letters 74, pp. 1387 - 1390 (1995)

Methfessel, M.; Hennig, D.; Scheffler, M.: Enhanced screening of core holes at transition-metal surfaces. Surface Review and Letters 2, pp. 197 - 201 (1995)

Moll, N.; Bockstedte, M.; Fuchs, M.; Pehlke, E.; Scheffler, M.: Application of generalized gradient approximations: The diamond-߭tin phase transition in Si and Ge. Physical Review B 52, pp. 2550 - 2556 (1995)

Oppo, S.; Fiorentini, V.; Scheffler, M.: Size-effect surfactants for metal-on-metal growth: Sb on Ag(111). Vuoto XXIV, pp. 37 - 39 (1995)

Pankratov, O.; Scheffler, M.: Formation of localized excitons and the breaking of chemical bonds at III-V (110) surfaces. Proc. of the 22nd International Conference on the Physics of Semiconductors, pp. 485 - 488 (1995)

Pankratov, O.; Scheffler, M.: Localized excitons and breaking of chemical bonds at III-V (110) surfaces. Physical Review Letters 75, pp. 701 - 704 (1995)

Pehlke, E.; Scheffler, M.: Hydrogen adsorption on and desorption from Si(001). Proc. of the 22nd International Conference on the Physics of Semiconductors, pp. 549 - 552 (1995)

Pehlke, E.; Scheffler, M.: Theory of adsorption and desorption of H_2/Si(001). Physical Review Letters 74, pp. 952 - 955 (1995)