Fritz Haber Institute of the Max Planck Society

Publications of Matthias Scheffler

All genres

Journal Article (600)

1991

Journal Article

M. Methfessel, D. Hennig, S. Weber and M. Scheffler: Ab-initio calculation of the effect of d-band occupation on the relaxation of transition metal surfaces. Proc. 75th We-Heraeus-Seminar and 21st Annual Internat. Symposium on Electronic Structure of Solids 174–176 (1991).

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Journal Article

M. Methfessel and M. Scheffler: Full-potential LMTO calculations for atomic relaxations at semiconductor-semiconductor interfaces. Physica B 172, 175–183 (1991).

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Journal Article

H. Overhof, M. Scheffler and C.C. Weinert: Formation energies, electronic structure, and hyperfine fields of chalcogen point defects and defect pairs in silicon. Physical Review B 43, 12494–12506 (1991).

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Journal Article

M. Scheffler, C. Droste, A. Fleszar, F. Máca, G. Wachutka and G. Barzel: A self-consistent surface-Green-function (SSGF) method. Physica B 172, 143–153 (1991).

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Journal Article

A. Schmalz, S. Aminpirooz, L. Becker, J. Haase, J. Neugebauer, M. Scheffler, D.R. Batchelor, D.L. Adams and E. Bogh: Unusual chemisorption geometry of Na on Al(111). Physical Review Letters 67, 2163–2166 (1991).

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1990

Journal Article

M.J. Caldas, J. Dabrowski, A. Fazzio and M. Scheffler: Anion-antisite-like defects in III-V compounds. Physical Review Letters 65 (16), 2046–2049 (1990).

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publisher-version

Journal Article

G. Doyen, E. Koetter, J.P. Vigneron and M. Scheffler: Theory of scanning tunneling microscopy. Applied Physics A 51, 281–288 (1990).

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Journal Article

X. Gonze, P. Käckell and M. Scheffler: Ghost states for separable, norm-conserving, ab initio pseudopotentials. Physical Review B 41 (17), 12264–12267 (1990).

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publisher-version

Journal Article

F. Beeler, O.K. Andersen and M. Scheffler: Electronic and Magnetic Structure of 3d-Transition-Metal Point Defects in Silicon Calculated from First Principles. Physical Review B 41, 1603–1624 (1990).

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Journal Article

S. Biernacki and M. Scheffler: First-principles calculations of thermodynamic potentials of perfect-crystal semiconductors and for defects in semiconductors. Proc. 4th Brazilian School of Semiconductor Physics 188–198 (1990).

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Journal Article

M.J. Caldas, J. Dabrowski, A. Fazzio and M. Scheffler: Anion-Antisite-like Defects in III-V Compounds. Proc.20th Int. Conf. on the Physicsof Semiconductors (ICPS-20) 469–472 (1990).

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Journal Article

M.J. Caldas, J. Dabrowski, A. Fazzio and M. Scheffler: Anion-Antisite-like Defects in III-V Compounds. Physical Review Letters 65 (16), 2046–2049 (1990).

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publisher-version

Journal Article

M.J. Caldas, A. Fazzio, J. Dabrowski and M. Scheffler: Anion-Antisite Defects in GaAs: As and Sb. Internat. Journal of Quantum Chemistry: Quantum Chemistry Symposium 24, 563–567 (1990).

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Journal Article

J. Dabrowski, M. Scheffler and R. Strehlow: Silicon Donor in Gallium Arsenide and its Relation to DX Centers. Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) 489–492 (1990).

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Journal Article

G. Doyen, E. Koetter, J.P. Vigneron and M. Scheffler: Theory of Scanning Tunneling Microscopy. Applied Physics A: Materials Science and Processing 51, 281–288 (1990).

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Journal Article

X. Gonze, P. Käckell and M. Scheffler: Ghost States for Separable, Norm-Conserving, Ab-Initio Pseudopotentials. Physical Review B 41, 12264–12267 (1990).

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Journal Article

J. Hebenstreit, M. Heinemann and M. Scheffler: Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs(110). Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) 215–218 (1990).

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Journal Article

J. Hebenstreit, M. Heinemann and M. Scheffler: Calculated Surface Geometries and Electronic Structures for Clean and Sodium Covered GaAs(110) Surfaces. Extended Abstract: Electronic, Optical and Device Properties of Layered Structures 21, 71–75 (1990).

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Journal Article

F. Maca, M. Said, K. Kambe and M. Scheffler: Electronic structure and angular resolved photoemission calculations for fcc and bcc silver surfaces. Vacuum 41 (1-3), 538–542 (1990).

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Journal Article

F. Máca, M. Said, K. Kambe and M. Scheffler: Electronic Structure and Angular Resolved Photoemission Calculations for fcc and bcc Silver Surfaces. Vacuum 41, 538–542 (1990).

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