Suchergebnisse

Pulm, H.; Hohlneicher, G.; Freund, H.-J.; Schuster, H.-U.; Drews, J.; Eberv, U.: Charge distribution in some ternary vintl phases as studied by v-ray photoelectron spectroscopy. Journal of the Less Common Metals 115 (1), S. 127 - 243 (1986)

Ubachs, W.; Meijer, G.; Meulen, J.J. t.; Dymanus, A.: High-resolution spectroscopy on the c¹Π ← a¹Δ transition in NH. Journal of Molecular Spectroscopy 115 (1), S. 88 - 104 (1986)

Pulm, H.; Liegener, C.-M.; Freund, H.-J.: Auger electron spectroscopic study of the CN anion: A study of the NaCN(001) surface in comparison with CO and N₂. Chemical Physics Letters 119 (4), S. 344 - 350 (1985)

Máca, F.; Scheffler, M.; Berndt, W.: The adsorption of sulphur on Pd(111). I: A LEED analysis of the (sqrt{2} x sqrt{3}) R 30° adsorbate structure. Surface scienc 160 (2), S. 467 - 474 (1985)

Seel, M.; Freund, H.-J.: Ab initio bandstructure of a layer of nitrogen molecules oriented in a herringbone structure. Solid State Communications 55 (10), S. 895 - 898 (1985)

Plummer, E.W.; Chen, C.T.; Ford, W.K.; Eberhardt, W.; Messmer, R.P.; Freund, H.-J.: A comparison of surface electron spectroscopies. Surface Science 158 (1-3), S. 58 - 83 (1985)

Bicker, R.; Deger, H.; Herzog, W.; Rieser, K.; Pulm, H.; Hohlneicher, G.; Freund, H.-J.: X-Ray Photoelectron Spectroscopy Study of Silica-Alumina Catalysts Used for a New Pyridine Synthesis. Journal of Catalysis 94 (1), S. 69 - 78 (1985)

Schmeisser, D.; Greuter, F.; Plummer H. -J., E. W.; Freund, H.-J.: Photoemission from Ordered Physisorbed Adsorbate Phases: N₂ on Graphite and CO on Ag(111). Physical Review Letters 54 (19), S. 2095 - 2098 (1985)

Freund, H.-J.; Messmer, R. P.; Kao, C. M.; Plummer, E. W.: Interpretation of the N 1 s photoelectron spectra of chemisorbed N₂ in terms of local molecule-metal interactions. Physical Review B 31 (8), S. 4848 - 4853 (1985)

Freund, H.-J.; Bigelow, R. W.; Börsch-Pulm, B.; Pulm, H.: Configuration interaction study of shake-up structure accompanying core-ionization of substituted aromatic molecules in the vapor and condensed phases: Nitrosobenzene, diazobenzene dioxide and the no dimer. Chemical Physics 94 (1-2), S. 215 - 233 (1985)

Pulm, H.; Marquardt, B.; Freund, H.-J.; Engelhardt, R.; Seki, K.; Karlsson, U.; Koch, E.E.; von Niessen, W.: Photoionization study of the CN anion: A study of the NaCN(001) surface in comparison with CO and N₂. Chemical Physics 92 (2-3), S. 457 - 470 (1985)

Bachelet, G. B.; Scheffler, M.: No large lattice relaxations around the arsenic antisite in GaAs. Proc. 17th Int. Conf. on the Physics of Semiconductors, S. 755 - 760 (1985)

Beeler, F.; Andersen, O. K.; Scheffler, M.: Electronic structure calculation of 3d-transition metal point defects in silicon. Microscopic Identification of Electronic Defects in Semiconductors, S. 129 (1985)

Beeler, F.; Andersen, O. K.; Scheffler, M.: Theoretical evidence for low-spin ground states of early interstitial and late substitutional 3d transition-metal ions in silicon. Physical Review Letters 55, S. 1498 - 1501 (1985)

Beeler, F.; Scheffler, M.; Jepsen, O.; Gunnarsson, O.: Identifiaction of chalcogen defects in silicon. Microscopic Identification of Electronic Defects in Semiconductors 46, S. 117 (1985)

Beeler, F.; Scheffler, M.; Jepsen, O.; Gunnarsson, O.: Identification of chalcogen point-defects sites in silicon by total-energy calculations. Physical Review Letters 54, S. 2525 - 2528 (1985)

Hohlneicher, G.; Pulm, H.; Freund, H.-J.: On the separation of initial and final state effects in photoelectron spectroscopy using an extension of the auger-parameter concept. Journal of Electron Spectroscopy and Related Phenomena 37 (2), S. 209 - 224 (1985)

Máca, F.; Scheffler, M.: Calculation of the Green's function for a crystal surface or interface. Comput. Phys. Commun. 38, S. 403 - 413 (1985)

Meyer, B. K.; Spaeth, J.-M.; Scheffler, M.: As_Ga-induced dichroism in GaAs. Physical Review Letters 54, S. 1333 - 1333 (1985)

Scheffler, M.; Beeler, F.; Jepsen, O.; Gunnarsson, O.; Andersen, O. K.; Bachelet, G. B.: Chemical bonding and lattice relaxations of deep-level defects. J. of Electronic Materials 14a, S. 45 - 58 (1985)