Suchergebnisse

Beeler, F.; Andersen, O. K.; Scheffler, M.: Electronic and Magnetic Structure of 3d-Transition-Metal Point Defects in Silicon Calculated from First Principles. Physical Review B 41, S. 1603 - 1624 (1990)

Bertolo, M.; Jacobi, K.; Nettesheim, S.; Wolf, M.; Hasselbrink, E.: Adsorption of NO on Pd(111). Vacuum 41 (1-3), S. 76 - 78 (1990)

Biernacki, S.; Scheffler, M.: First-principles calculations of thermodynamic potentials of perfect-crystal semiconductors and for defects in semiconductors. Proc. 4th Brazilian School of Semiconductor Physics, S. 188 - 198 (1990)

Black, J. F.; Hasselbrink, E.; Waldeck, J. R.; Zare, R. N.: Photofragment orientation as a probe of near-threshold non-adiabatic phenomena in the photodissociation of ICN. Molecular Physics 71 (5), S. 1143 - 1153 (1990)

Block, J. H.; Bradshaw, A. M.; Gravelle, P.C.; Haber, J.; Hansen, R.S.; Roberts, M.W.; Sheppard, N.; Tamaru, K.: A survey of experimental techniques in surface chemical physics. Pure and Applied Chemistry 62 (12), S. 2297 - 2322 (1990)

Bludau, H.; Skottke, M.; Pennemann, B.; Mrozek, P.; Wandelt, K.: Growth of ultrathin Au and Ag films on a modified Ru surface. Vacuum 41 (4-6), S. 1106 - 1108 (1990)

Bose, S. K.; Kudrnovsky, J.; van Schilfgaarde, M.; Blöchl, P.; Jepsen, O.; Methfessel, M.; Paxton, A. T.; Andersen, O. K.: Electronic Structure of Ordered and Disordered Pd_3 Fe. J. of Magnetism and Magnetic Materials 87, S. 97 - 105 (1990)

Selected Proceedings of the 7th International Conference on Solid Surfaces (ICSS-7), Köln 1989. Vacuum 41 (1990)

Bradshaw, A. M.; Somers, J. S.: X-ray Absorption Spectroscopy of Molecular Adsorbates. Physica Scripta T31, S. 189 - 198 (1990)

Caldas, M. J.; Dabrowski, J.; Fazzio, A.; Scheffler, M.: Anion-Antisite-like Defects in III-V Compounds. Proc.20th Int. Conf. on the Physicsof Semiconductors (ICPS-20), S. 469 - 472 (1990)

Caldas, M. J.; Dabrowski, J.; Fazzio, A.; Scheffler, M.: Anion-Antisite-like Defects in III-V Compounds. Physical Review Letters 65 (16), S. 2046 - 2049 (1990)

Caldas, M. J.; Fazzio, A.; Dabrowski, J.; Scheffler, M.: Anion-Antisite Defects in GaAs: As and Sb. Internat. Journal of Quantum Chemistry: Quantum Chemistry Symposium 24, S. 563 - 567 (1990)

Castro, G. R.; Conrad, H.; Doyen, G.; Grillo, M. E.; Hemmen, R.; Isern, H.: Combined experimental and theoretical study of CO on NiAl(110). Vacuum 41 (1-3), S. 731 - 732 (1990)

Chasse, T.; Alonso, M.; Cimino, R.; Horn, K.; Braun, W.: Indium interaction with GaP (110): example of an unreacted interface. Vacuum 41 (4-6), S. 835 - 838 (1990)

Cimino, R.; Carbone, C.; Braun , W.: Role of interface gap states during the formation of the Fe-GaAs(110) Schottky barrier. Vacuum 41 (4-6), S. 1062 - 1063 (1990)

Crapper, M. D.; Kilcoyne, A. L. D.; Woodruff, D. P.: A simple parallel isochromat detector for inverse photoemission. Physica Scripta 41 (4), S. 546 - 549 (1990)

Dabrowski, J.; Scheffler, M.; Strehlow, R.: Silicon Donor in Gallium Arsenide and its Relation to DX Centers. Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20), S. 489 - 492 (1990)

Doyen, G.; Koetter, E.; Barth, J. V.; Drakova, D.: Theory of Tunneling from Transition Metal Tips. Scanning Tunneling Microspocy and Related Methods, S. 97 - 111 (1990)

Doyen, G.; Koetter, E.; Vigneron, J. P.; Scheffler, M.: Theory of Scanning Tunneling Microscopy. Applied Physics A: Materials Science and Processing 51, S. 281 - 288 (1990)

Drakova, D.; Doyen, G.: CO Adsorption on Metal Surfaces - Model Hamiltonian Study. Surface science: a journal devoted to the physics and chemistry of interfaces 226, S. 263 - 285 (1990)