Publikationen von Thomas Hammerschmidt

Hammerschmidt, T.; Kratzer, P.; Scheffler, M.: Erratum: Analytic many-body potential for InAsÕGaAs surfaces and nanostructures: Formation energy of InAs quantum dots [Phys. Rev. B 77, 235303 (2008)]. Physical Review B 81 (15), 159905(E) (2010)

Kratzer, P.; Hammerschmidt, T.: Atomic processes in molecular beam epitaxy on strained InAs(137): A density-functional theory study. Physical Review B 80 (3), S. 035324-1 - 035324-7 (2009)

Hammerschmidt, T.; Kratzer, P.; Scheffler, M.: Analytic many-body potential for InAs/GaAs surfaces and nanostructures: Formation energy of InAs quantum dots. Physical Review B 77 (23), S. 235303-1 - 235303-16 (2008)

Hammerschmidt, T.; Kratzer, P.; Scheffler, M.: Elastic response of cubic crystals to biaxial strain: Analytic results and comparison to density functional theory for InAs. Physical Review B 75 (23), 235328 (2007)

Migliorato, M. A.; Powell, D.; Cullis, A. G.; Hammerschmidt, T.; Srivastava, G. P.: Composition and strain dependence of the piezoelectric coefficients in In_xGa_1-xAs alloys. Physical Review B 74 (24), 245332 (2006)

Seguin, R.; Schliwa, A.; Germann, T. D.; Rodt, S.; Pötschke, K.; Strittmatter, A.; Pohl, U. W.; Bimberg, D.; Winkelnkemper, M.; Hammerschmidt, T. et al.; Kratzer, P.: Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots. Applied Physics Letters 89 (26), 263109 (2006)

Kunert, R.; Schöll, E.; Hammerschmidt, T.; Kratzer, P.: Strain field calculations of quantum dots - a comparison study of two methods. In: Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006, S. 73 - 74 (Hg. Jantsch, W.; Schäffler, F.). Springer, Berlin (2007)

Hammerschmidt, T.; Kratzer, P.: Role of strain relaxation during different stages of InAs quantum dot growth. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, S. 601 - 602 (Hg. Menendez, J.; Van de Walle, C.G.). 27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, 26. Juli 2004 - 30. Juli 2004. American Institute of Physics, USA (2005)

Hammerschmidt, T.: Growth simulations of InAs/GaAs quantum dots. Dissertation, Technische Universität, Berlin (2006)