Publications of M. Scheffler
All genres
Journal Article (590)
1990
Journal Article
, , and M. Scheffler: Anion-Antisite Defects in GaAs: As and Sb.
Journal Article
, M. Scheffler and : Silicon Donor in Gallium Arsenide and its Relation to DX Centers.
Journal Article
Doyen, G., Erich Koetter, and Matthias Scheffler: Theory of scanning tunneling microscopy.
Journal Article
Doyen, G., Erich Koetter, and Matthias Scheffler: Theory of Scanning Tunneling Microscopy.
Journal Article
Gonze, Xavier, Peter Käckell and Matthias Scheffler: Ghost states for separable, norm-conserving, ab initio pseudopotentials.
Journal Article
Gonze, X., Peter Käckell and Matthias Scheffler: Ghost States for Separable, Norm-Conserving, Ab-Initio Pseudopotentials.
Journal Article
, M. Heinemann and Matthias Scheffler: Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs(110).
Journal Article
, M. Heinemann and Matthias Scheffler: Calculated Surface Geometries and Electronic Structures for Clean and Sodium Covered GaAs(110) Surfaces.
Journal Article
Maca, F., Mansur Said, Kyozaburo Kambe and Matthias Scheffler: Electronic structure and angular resolved photoemission calculations for fcc and bcc silver surfaces.
Journal Article
, , and M. Scheffler: Electronic Structure and Angular Resolved Photoemission Calculations for fcc and bcc Silver Surfaces.
Journal Article
Methfessel, Michael, and Matthias Scheffler: The Influence of Structural Relaxation on the Valence-Band Offset at Semiconductor-Semiconductor Interfaces.
Journal Article
, M. Scheffler, , and : Spatial Electron Current Distribution in a Scanning Tunneling Microscope.
1989
Journal Article
and M. Scheffler: Calculation of total energies, reaction and diffusion processes of transition-metal point defects in silicon.
Journal Article
and M. Scheffler: Theory of 4d-transition-metal ions in silicon: Total-energies, diffusion, electronic and magnetic properties.
Journal Article
and Matthias Scheffler: Negative thermal expansion of diamond and zinc-blende semiconductors.
Journal Article
, , and M. Scheffler: Calculated thermodynamic potentials for the vacancy and the oxygen a-center in silicon.
Journal Article
and M. Scheffler: The As_Ga-As_i pair in GaAs, the arsenic antisite and the properties of EL2.
Journal Article
and M. Scheffler: The EL2 defect in GaAs.
Journal Article
and M. Scheffler: The isolated arsenic antisite defect in GaAs and the properties of EL2.
Journal Article
, M. Scheffler and : Computation of hyperfine interactions for substitutional Se^+ and S^+ impurities in silicon.