Publications of Matthias Scheffler
All genres
Journal Article (592)
1992
Journal Article
Doyen, G., D. Drakova, V. Mujica and Matthias Scheffler: Theory of the scanning tunneling microscope.
Journal Article
Hebenstreit, Jörk and Matthias Scheffler: Self-consistent pseudopotential calculations for sodium adsorption on GaAs(110).
Journal Article
Heinemann, Martina and Matthias Scheffler: Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface.
Journal Article
Methfessel, Michael, D. Hennig and Matthias Scheffler: Calculated surface energies of the 4d transition metals: A study of bond-cutting models.
Journal Article
Methfessel, Michael, D. Hennig and Matthias Scheffler: Trends of the surface relaxations, surface energies, and work functions of the 4d transition metals.
Journal Article
Neugebauer, Jörg and Matthias Scheffler: Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111).
Journal Article
, Matthias Scheffler, Martina Heinemann and : Microscopic Properties of Thin Films: Learning About Point Defects.
Journal Article
Stampfl, Catherine, Matthias Scheffler, Herbert Over, , , and : Identification of stable and metastable adsorption sites for K adsorbed on Al(111).
Journal Article
, Andrzej Fleszar, and Matthias Scheffler: Self-consistent Green-function method for the calculation of electronic properties of localized defects at surfaces and in the bulk.
1991
Journal Article
Alves, José Luiz A., J. Hebenstreit and M. Scheffler: Calculated atomic structures and electronic properties of GaP, InP, GaAs and InAs(110) surfaces.
Journal Article
Gonze, X., Roland Stumpf and Matthias Scheffler: Analysis of fully separable potentials.
Journal Article
, M. Heinemann and M. Scheffler: Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes.
Journal Article
Methfessel, Michael, , S. Weber and Matthias Scheffler: Ab-initio calculation of the effect of d-band occupation on the relaxation of transition metal surfaces.
Journal Article
Methfessel, Michael and Matthias Scheffler: Full-potential LMTO calculations for atomic relaxations at semiconductor-semiconductor interfaces.
Journal Article
, Matthias Scheffler and : Formation energies, electronic structure, and hyperfine fields of chalcogen point defects and defect pairs in silicon.
Journal Article
Scheffler, Matthias, , Andrzej Fleszar, , and G. Barzel: A self-consistent surface-Green-function (SSGF) method.
Journal Article
, , , , Jörg Neugebauer, Matthias Scheffler, , and : Unusual chemisorption geometry of Na on Al(111).
1990
Journal Article
, and M. Scheffler: Electronic and Magnetic Structure of 3d-Transition-Metal Point Defects in Silicon Calculated from First Principles.
Journal Article
and M. Scheffler: First-principles calculations of thermodynamic potentials of perfect-crystal semiconductors and for defects in semiconductors.
Journal Article
, , and Matthias Scheffler: Anion-antisite-like defects in III-V compounds.