Publications of Matthias Scheffler
All genres
Journal Article (599)
1993
Journal Article
Scheffler, Matthias, Jörg Neugebauer and Roland Stumpf: A step from surface fiction towards surface science.
Journal Article
Stampfl, Catherine, , , , Matthias Scheffler, Herbert Over and : The structure of Al(111)-K-(√3 × √3)R30° determined by LEED: stable and metastable adsorption sites.
Journal Article
Wenzien, Bernd, Jörg Bormet, Jörg Neugebauer and Matthias Scheffler: Electronic structure of (3 x 3)-R30°-Na and -K on Al(111): comparison of "normal" and substitutional adsorption sites.
Journal Article
, and Matthias Scheffler: Pressure dependence of deep levels of the As antisite, the Ga-vacancy-As-interstitial pair, and of the stable and metastable states of EL2.
1992
Journal Article
and M. Scheffler: Self-consistent study of the electronic and structural properties of the clean Si(001) (2x1) surface.
Journal Article
Dabrowski, Jarek and Matthias Scheffler: Theory of defect metastabilities in III-V compounds.
Journal Article
and M. Scheffler: Defect metastability in III-V compounds.
Journal Article
Doyen, G., D. Drakova, V. Mujica and Matthias Scheffler: Theory of the scanning tunneling microscope.
Journal Article
Hebenstreit, Jörk and Matthias Scheffler: Self-consistent pseudopotential calculations for sodium adsorption on GaAs(110).
Journal Article
Heinemann, Martina and Matthias Scheffler: Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface.
Journal Article
Methfessel, Michael, D. Hennig and Matthias Scheffler: Calculated surface energies of the 4d transition metals: A study of bond-cutting models.
Journal Article
Methfessel, Michael, D. Hennig and Matthias Scheffler: Trends of the surface relaxations, surface energies, and work functions of the 4d transition metals.
Journal Article
Neugebauer, Jörg and Matthias Scheffler: Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111).
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, Matthias Scheffler, Martina Heinemann and : Microscopic Properties of Thin Films: Learning About Point Defects.
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Stampfl, Catherine, Matthias Scheffler, Herbert Over, , , and : Identification of stable and metastable adsorption sites for K adsorbed on Al(111).
Journal Article
, Andrzej Fleszar, and Matthias Scheffler: Self-consistent Green-function method for the calculation of electronic properties of localized defects at surfaces and in the bulk.
1991
Journal Article
Alves, José Luiz A., J. Hebenstreit and M. Scheffler: Calculated atomic structures and electronic properties of GaP, InP, GaAs and InAs(110) surfaces.
Journal Article
Gonze, X., Roland Stumpf and Matthias Scheffler: Analysis of fully separable potentials.
Journal Article
, M. Heinemann and M. Scheffler: Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes.
Journal Article
Methfessel, Michael, , S. Weber and Matthias Scheffler: Ab-initio calculation of the effect of d-band occupation on the relaxation of transition metal surfaces.