Publications of Matthias Scheffler

Journal Article (599)

2003
Journal Article
Todorova, Mira, E. Lundgren, Volker Blum, A. Mikkelsen, S. Gray, J. Gustafson, M. Borg, Jutta Rogal, Karsten Reuter, J.N. Andersen and Matthias Scheffler: The Pd(100)-(√5 x √5)R27º-O surface oxide revisited.
Journal Article
Wang, Jinhai, Chao Yang Fan, Qiang Sun, Karsten Reuter, Karl Jacobi, Matthias Scheffler and Gerhard Ertl: Surface coordination chemistry: Dihydrogen versus hydride complexes on RuO2(110).
Journal Article
Wang, Jinhai, Chao Yang Fan, Qiang Sun, Karsten Reuter, Karl Jacobi, Matthias Scheffler and Gerhard Ertl: Surface coordination chemistry: Dihydrogen versus hydride complexes on RuO2(110).
Journal Article
Wang, Xiao-Gang, John R. Smith and Matthias Scheffler: Adhesion of copper and alumina from first principles.
2002
Journal Article
Erwin, Steven C., Sung-Hoon Lee and Matthias Scheffler: First-principles study of nucleation, growth, and interface structure on Fe/GaAs.
Journal Article
Fichthorn, Kristen A., M.L. Merrick and Matthias Scheffler: A kinetic Monte Carlo investigation of island nucleation and growth in thin-film epitaxy in the presence of substrate-mediated interactions.
Journal Article
Filippi, Claudia, Sorcha B. Healy, Peter Kratzer, Eckhard Pehlke and Matthias Scheffler: Quantum Monte Carlo calculations of H2 dissociation on Si(001).
Journal Article
Fuchs, Martin, Juarez Lopes Ferreira Da Silva, Catherine Stampfl, Jörg Neugebauer and Matthias Scheffler: Cohesive properties of group-III nitrides: A comparative study of all-electron and pseudopotential calculations using the generalized gradient approximation.
Journal Article
Ganduglia-Pirovano, M.Veronica, Karsten Reuter and Matthias Scheffler: Stability of subsurface oxygen at Rh(111).
Journal Article
Hedström, Magnus, Arno Schindlmayr and Matthias Scheffler: Quasiparticle Calculations for Point Defects on Semiconductor Surfaces.
Journal Article
Kratzer, Peter, Evgeni Penev and Matthias Scheffler: First-principles studies of kinetics in epitaxial growth of III-V semiconductors.
Journal Article
Kratzer, Peter and Matthias Scheffler: Reaction-limited island nucleation in molecular beam epitaxy of compound semiconductors.
Journal Article
Kroes, Geert-Jan, Axel Groß, Evert-Jan Baerends, Matthias Scheffler and Drew A. McCormack: Quantum theory of dissociative chemisorption on metal surfaces.
Journal Article
Lee, Seung Mi, Sung-Hoon Lee and Matthias Scheffler: Comment on "Anomalous mobility of strongly bound surface species: Cl on GaAs(001)-c(8x2)".
Journal Article
Li, Weixue, Catherine Stampfl and Matthias Scheffler: Oxygen adsorption on Ag(111): A density-functional theory investigation.
Journal Article
Pentcheva, Rossitza and Matthias Scheffler: Initial adsorption of Co on Cu(001): A first-principles investigation.
Journal Article
Reuter, Karsten, M.Veronica Ganduglia-Pirovano, Catherine Stampfl and Matthias Scheffler: Metastable precursors during the oxidation of the Ru(0001) surface.
Journal Article
Reuter, Karsten and Matthias Scheffler: Composition, structure, and stability of RuO2(110) as a function of oxygen pressure.
Journal Article
Reuter, Karsten, Catherine Stampfl, M.Veronica Ganduglia-Pirovano and Matthias Scheffler: Atomistic description of oxide formation on metal surfaces: the example of ruthenium.
Journal Article
Stampfl, Catherine, M.Veronica Ganduglia-Pirovano, Karsten Reuter and Matthias Scheffler: Catalysis and corrosion: the theoretical surface-science context.
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