Publications of Martina Heinemann

Journal Article (5)

1992
Journal Article
Heinemann, Martina and Matthias Scheffler: Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface.
Journal Article
Ourmazd, A., Matthias Scheffler, Martina Heinemann and J.-L. Rouviere: Microscopic Properties of Thin Films: Learning About Point Defects.
1991
Journal Article
Hebenstreit, J., M. Heinemann and M. Scheffler: Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes.
1990
Journal Article
Hebenstreit, J., M. Heinemann and Matthias Scheffler: Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs(110).
Journal Article
Hebenstreit, J., M. Heinemann and Matthias Scheffler: Calculated Surface Geometries and Electronic Structures for Clean and Sodium Covered GaAs(110) Surfaces.

Conference Paper (1)

1994
Conference Paper
Heinemann, Martina and Matthias Scheffler: The formation of a Schottky barrier: Na on GaAs(110).
(4th International Conference on the Formation of Semiconductor Interfaces (ICFSI), Jülich, Germany, Jun 1993).

Thesis - PhD (1)

1991
Thesis - PhD
Heinemann, M.: Elektronische und atomare Struktur von GaAs/AlAs-Grenzflächen.
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