Publications of Karsten Horn

Horn, K., M. Moreno, M. Alonso, M. Höricke, R. Hey, J.L. Sacedón and K.H. Ploog: Photoelectron emission from heterojunctions with intralayers: band-offset changes vs. band-bending effects. Vacuum 67 (1), 115–123 (2002).

Palomares, F.J., M. Serrano, A. Ruiz, F. Soria, K. Horn and M. Alonso: ARPES study of the surface states from Au/Ag(111): evolution with coverage and photon energy. Surface Science 513 (2), 283–294 (2002).

Rotenberg, E., W. Theis and K. Horn: Model simulations of momentum-resolved photoemission from quasicrystals. Journal of Alloys and Compounds 342 (1-2), 348–351 (2002).

Aballe, L., C. Rogero, S. Gokhale, S.K. Kulkarni and K. Horn: Quantum-well states in ultrathin aluminium films on Si(111). Surface Science 482-485 (1), 488–494 (2001).

Aballe, L., C. Rogero, P. Kratzer, S. Gokhale and K. Horn: Probing interface electronic structure with overlayer quantum-well resonances: Al/Si(111). Physical Review Letters 87 (15), 156801 (2001).

Barman, S.R., P. Häberle, K. Horn, J.A. Maytorena and A. Liebsch: Quantum well behavior without confining barrier observed via dynamically screened photon field. Physical Review Letters 86 (22), 5108–5111 (2001).

Barman, S.R., C. Stampfl, P. Häberle, W. Ibanez, Y.Q. Cai and K. Horn: Collective excitations in alkali metals on Al(111). Physical Review B 64 (19), 195410 (2001).

Ebert, P., P. Quadbeck, K. Urban, B. Henninger, K. Horn, G. Schwarz, J. Neugebauer and M. Scheffler: Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors. Applied Physics Letters 79 (18), 2877–2879 (2001).

Evans, D.A., H.J. Steiner, R. Middleton, T.S. Jones, C.-H. Chen, K. Horn, S. Park, T.U. Kampen, D. Tenne, D.R.T. Zahn, A. Patchett and I.T. McGovern: In-situ monitoring of the growth of copper phthalocyanine films on InSb by organic molecular beam deposition. Applied Surface Science 175-176, 374–378 (2001).

Häberle, P., W. Ibañez, S.R. Barman, Y.Q. Cai and K. Horn: Photoexcited collective modes in thin alkali layers adsorbed on Al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 182 (1-4), 102–108 (2001).

Pascual, J.I., Z. Song, J.J. Jackiw, K. Horn and H.-P. Rust: Visualization of surface electronic structure: dispersion of surface states of Ag(110). Physical Review B 63 (24), 241103 (2001).

Song, Z., J.I. Pascual, H. Conrad, K. Horn and H.-P. Rust: Imaging surface electronic structure of NiAl(110) using low-temperature scanning tunneling microscopy. Applied Physics A 72 (2), 159–163 (2001).

Song, Z., J.I. Pascual, H. Conrad, K. Horn and H.-P. Rust: Surface states of d character imaged by scanning tunneling microscopy. Surface Science 491 (1-2), 39–47 (2001).

Barman, S.R., C. Stampfl, P. Häberle and K. Horn: Photon-excited collective modes in a surface alloy. Physical Review B 61 (19), 12721–12724 (2000).

Casaletto, M.P., R. Zanoni, M. Carbone, M.N. Piancastelli, L. Aballe, K. Weiss and K. Horn: Ethylene adsorption on Si(100)2×1: A high-resolution photoemission study. Physical Review B 62 (24), 17128–17133 (2000).

Casaletto, M.P., R. Zanoni, M. Carbone, M.N. Piancastelli, L. Aballe, K. Weiss and K. Horn: High resolution photoemissionstudy of ethanol on Si(100)2x1. Surface Science 447 (1-3), 237–244 (2000).

Ebert, P., K. Urban, L. Aballe, C.-H. Chen, K. Horn, G. Schwarz, J. Neugebauer and M. Scheffler: Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110). Physical Review Letters 84 (25), 5816–5819 (2000).

Horn, K.: Photoemission studies of barrier heights in metal–semiconductor interfaces and heterojunctions. Applied Surface Science 166 (1-4), 1–11 (2000).

Moreno, M., M. Alonso , J.L. Sacedón, M. Höricke, R. Hey, K. Horn and K.H. Ploog: Si and Be intralayers at GaAs/AlAs and GaAs/GaAs junctions: Low-temperature photoemission measurements. Physical Review B 61 (23), 16060–16067 (2000).

Moreno, M., M. Alonso, M. Höricke, R. Hey, K. Horn, J.L. Sacedón and K.H. Ploog: Photoemission results on intralayer insertion at III-V/III-V junctions: A critical appraisal of the different interpretations. Journal of Vacuum Science and Technology B 18 (4), 2128–2138 (2000).