Publications of Matthias Scheffler
All genres
Journal Article (591)
Journal Article
160 (2), pp. 467 - 474 (1985)
The adsorption of sulphur on Pd(111). I: A LEED analysis of the (sqrt{2} x sqrt{3}) R 30° adsorbate structure. Surface scienc
Journal Article
No large lattice relaxations around the arsenic antisite in GaAs. Proc. 17th Int. Conf. on the Physics of Semiconductors, pp. 755 - 760 (1985)
Journal Article
Electronic structure calculation of 3d-transition metal point defects in silicon. Microscopic Identification of Electronic Defects in Semiconductors, p. 129 (1985)
Journal Article
55, pp. 1498 - 1501 (1985)
Theoretical evidence for low-spin ground states of early interstitial and late substitutional 3d transition-metal ions in silicon. Physical Review Letters
Journal Article
46, p. 117 (1985)
Identifiaction of chalcogen defects in silicon. Microscopic Identification of Electronic Defects in Semiconductors
Journal Article
54, pp. 2525 - 2528 (1985)
Identification of chalcogen point-defects sites in silicon by total-energy calculations. Physical Review Letters
Journal Article
38, pp. 403 - 413 (1985)
Calculation of the Green's function for a crystal surface or interface. Comput. Phys. Commun.
Journal Article
54, p. 1333 - 1333 (1985)
As_Ga-induced dichroism in GaAs. Physical Review Letters
Journal Article
14a, pp. 45 - 58 (1985)
Chemical bonding and lattice relaxations of deep-level defects. J. of Electronic Materials
Journal Article
31, pp. 6541 - 6551 (1985)
Total-energy gradients and lattice distortions at point defects in semiconductors. Physical Review B
Journal Article
29, pp. 692 - 702 (1984)
Angle-resolved photoemission and the electronic structure of Pd(111). Physical Review B
Journal Article
52, pp. 851 - 854 (1984)
Optical properties of As antisite and EL2 defects in GaAs. Physical Review Letters
Journal Article
29, pp. 3269 - 3282 (1984)
Electronic structure and identification of deep defects in GaP. Physical Review B
Journal Article
116, pp. 18 - 27 (1983)
Multivacancies, interstitials, and self-interstitial migration in Si. Physica B
Journal Article
117/118, pp. 137 - 139 (1983)
Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors. Physica B/C
Journal Article
26 (10), pp. 5706 - 5715 (1982)
Electronic structure of deep sp-bonded impurities in silicon. Physical Review B
Journal Article
49, pp. 1765 - 1768 (1982)
Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP. Physical Review Letters
Journal Article
15, pp. L645 - L650 (1982)
Determination of deep donor binding energies from their g-values. Journal of Physics C: Solid State Physics
Journal Article
47, p. 413 (1981)
Identification and properties of native defects in GaP. Physical Review Letters
Journal Article
Photoemission and the electronic structure of a c(2x2) sulfur adsorbate-layer on Pd. Proceedings of the 4th International Conference on Solid Surfaces and the 3rd European Conf. on Surf. Sci. (1980)