Publications of Matthias Scheffler

Conference Paper (27)

Conference Paper
Grosse, F.; Neugebauer, J.; Scheffler, M.: Phase stability and segregation of In_xGa_1-xN alloys. In: Proceedings 24th International Conference on the Physics of Semiconductors 1999 (Ed. David, G.). International Conference on the Physics of Semiconductors 1999, Jerusalem, August 02, 1998 - August 07, 1998. World Scientific, Singapore (1999)
Conference Paper
Neugebauer, J.; Zywietz, T. K.; Scheffler, M.; Northrup, J. E.: Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998, pp. 235 - 242 (Ed. Gershoni, D.). 24th International Conference on the Physics of Semiconductors, Jerusalem, Israel, August 02, 1998 - August 07, 1998. World Scientific, Singapore (1999)
Conference Paper
Groß, A.; Scheffler, M.: Steering and Isotope Effects in the Dissociative Adsorption of H2/Pd(100). In: Frontiers in Materials Modelling and Design: Proceedings of the Conference on Frontiers in Materials Modelling and Design, Kalpakkam, 20–23 August 1996, pp. 285 - 292 (Eds. Kumar, V.; Sengupta, S.; Raj, B.). Conference on Frontiers in Materials Modelling and Design, Kalpakkam, August 20, 1996 - August 23, 1996. Springer, Berlin (1997)
Conference Paper
Pehlke, E.; Moll, N.; Scheffler, M.: The equilibrium shape of quantum dots. In: Advances in Computational Materials Science, pp. 23 - 32 (Eds. Fiorentini, V.; Meloni, F.). VI Italian-Swiss Workshop on, S. Margherita di Pula, (Cagliari), September 28, 1996 - October 02, 1996. Italian Physical Society, Bologna (1997)
Conference Paper
Petersen, M.; Ruggerone, P.; Scheffler, M.: He scattering from metal surfaces. In: Proceedgins VI Italian-Swiss Workshop on Advances in Computational Materials Science, pp. 43 - 52 (Ed. Fiorentini, V.). Italian Swiss Workshop Advances in Computational Science, Cagliari, September 28, 1996 - October 02, 1996. Italian Physical Society, Bologna (1997)
Conference Paper
Ruggerone, P.; Kley, A.; Scheffler, M.: Microscopic processes behind metal homoepitaxy. In: Proceedings VI Italian-Swiss Workshop on Advances in Computational Materials Science, pp. 33 - 42 (Ed. Fiorentini, V.). Italian Swiss Workshop on Advances in Computational Materials Science, Cagliari, September 28, 1996 - October 02, 1996. Italian Physical Society, Bologna (1997)
Conference Paper
Groß, A.; Bockstedte, M.; Scheffler, M.: Ab initio Molecular Dynamics Study of D2 Desorption from Si(100). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], pp. 951 - 954 (Ed. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, July 21, 1996 - July 26, 1996. World Scientific, Singapore (1996)
Conference Paper
Kley, A.; Scheffler, M.: Diffusivity of Ga and Al adatoms on GaAs(001). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], pp. 1031 - 1034 (Ed. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, Germany, July 21, 1996 - July 26, 1996. (1996)
Conference Paper
Pehlke, E.; Moll, N.; Scheffler, M.: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate. In: 23rd International Conference on the Physics of Semiconductors, pp. 1301 - 1304 (Ed. Zimmermann, R.). International Conference on the Physics of Semiconductors, Berlin, Germany, July 21, 1996 - July 26, 1996. World Scientific, Singapore (1996)
Conference Paper
Ruggerone, P.; Kohler, B.; Wilke, S.; Scheffler, M.: Electronic origin of the H-induced phonon anomalies on Mo(110). In: Electronic Surface and Interface States on Metallic Systems, pp. 113 - 126 (Ed. Bertel, E.). 134th W.-E.-Heraeus-Seminar, Honnef, October 17, 1994 - October 20, 1994. World Scientific, Singapore (1995)
Conference Paper
Heinemann, M.; Scheffler, M.: The formation of a Schottky barrier: Na on GaAs(110). In: Formation of Semiconductor Interfaces, pp. 297 - 300 (Eds. Lengeler, B.; Lüth, H.; Mönch, W.; Pollmann, J.). 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI), Jülich, Germany, June 14, 1993 - June 18, 1993. World Scientific, Singapore (1994)
Conference Paper
Oppo, S.; Fiorentini, V.; Scheffler, M.: Surface alloying and surfactant action of Sb on Ag(111). In: Materials Research Society Symposium Proceedings, Vol. 317, pp. 323 - 328. Materials Research Society, New York (1994)
Conference Paper
Dabrowski, J.; Pehlke, E.; Scheffler, M.: DFT-LDA calculations ofsurface core-level shifts for Si(001), Ge(001), and Ge on Si(001) (2x1) surfaces. In: 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992, pp. 389 - 392 (Eds. Jiang, P.; Zheng, H.-Z.). 21st International Conference on the Physics of Semiconductors (ICPS-21), Beijing, China, August 10, 1992 - August 14, 1992. World Scientific, Singapore (1992)
Conference Paper
Máca, F.; Scheffler, M.; Berndt, W.: A LEED analysis of sqrt{3} x sqrt{3} S on Pd(111). In: Proc. 3rd Symposium on Surface Physics: Physics of Solid Surfaces, pp. 195 - 198. (1985)
Conference Paper
Bernholc, J.; Lipari, N. O.; Pantelides, S. T.; Scheffler, M.: Theory of point defects and deep impurities in semiconductors. In: Defects and Radiation Effects in Semiconductors, pp. 1 - 17 (Ed. Hasiguti, R. R.). 11th International Conference on Defects and Radiation Effects in Semiconductors, Oiso, Japan, September 08, 1980 - September 11, 1980. Institute of Physics, London (1981)
Conference Paper
Scheffler, M.; Kambe, K.; Forstmann, F.; Jacobi, K.: Angle-resolved photoemission of the oxygen overlayer on Ni,(001): Part 1 (Calculations). In: Proceedings of the 7th International Vacuum Congress and the 3rd International Conference on Solid Surfaces of the International Union for Vacuum Science, Technique and Applications, pp. 2223 - 2226 (Ed. Dobrozemsky, R.). 7th International Vacuum Congress, Vienna, Austria, September 12, 1977 - September 16, 1977. (1977)
Conference Paper
Scheffler, M.; Kambe, K.; Forstmann, F.: Energy and angle-resolved photoemission. In: Proceedings International Symposium on Photoemission, p. 227 (Eds. R.F. Willis, R.F.; Feuerbacher, B.; Fitton, B.; Backx, C.). ESA, Paris, France (1976)

Talk (177)

Talk
Scheffler, M.: Welcome Address and Concluding Remarks. Conference on a Fair Data Infrastructure for Materials Genomics, Online Event (2022)
Talk
Scheffler, M.: Welcome and Overview. NOMAD-ECAM-IRIS-Pritzker Workshop and Hands-on Tutorial 2022, Berlin (2022)
Talk
Scheffler, M.: Finding Structure in Data, Identifying Maps of Materials Properties, and Detecting the “Materials Genes”. NOMAD-ECAM-IRIS-Pritzker Workshop and Hands-on Tutorial 2022, Berlin (2022)
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