Publications of M. Scheffler
All genres
Journal Article (591)
Journal Article
38-41, pp. 293 - 298 (1989)
Computation of hyperfine interactions for substitutional Se^+ and S^+ impurities in silicon. Mat. Sci. Forum
Journal Article
4, pp. 315 - 319 (1989)
Ab-initio calculations of hyperfine fields for chalcogen point defects and defect pairs in silicon: Identification of the pair atomic structure. Materials Science and Engineering B
Journal Article
29, pp. 231 - 250 (1989)
Chemical binding, stability and metastability of defects in semiconductors. Festkörperprobleme
Journal Article
12, p. 1 (1989)
Electronic and vibrational properties of deep centers in semiconductors. Egyp. J. Sol.
Journal Article
38-41, pp. 299 - 304 (1989)
Parameter-free calculations of the pressure dependence of impurity levels, entropies and of defect-formation volumes. Mat. Sci. Forum
Journal Article
Ab-initio calculations for native point defects in GaAs. Proc. 5th Conf. on Semi-Insulating III-V Materials, pp. 37 - 42 (1988)
Journal Article
The EL2 defect in GaAs. Proc. 8th Int. School on Defects in Crystals, pp. 425 - 430 (1988)
Journal Article
60, pp. 2183 - 2186 (1988)
Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2. Physical Review Letters
Journal Article
Calculation of electronic structure for a crystal surface or interface. Proc. 4th Symposium on Surface Physics, pp. 221 - 224 (1988)
Journal Article
51, pp. 381 - 390 (1988)
Surface Green's function for a rumpled crystal surface. Comput. Phys. Commun.
Journal Article
38, pp. 8505 - 8507 (1988)
Electronic structure of fcc and bcc close-packed silver surfaces. Physical Review B
Journal Article
4, pp. 115 - 122 (1988)
Thermodynamic aspects of bulk and surface defects - first-principle calculations. Physics of Solid Surfaces 1987
Journal Article
58 (1), pp. 107 - 121 (1988)
Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors. Philosophical Magazine A
Journal Article
21, pp. 841 - 846 (1988)
Total-energy calculation for isolated oxygen impurities in silicon. J. Phys. C
Journal Article
Electronic structure calculation of 3d and 4d transition metal point defects in silicon. Proc. 18th Int. Conf. on the Physics of Semiconductors, pp. 875 - 878 (1987)
Journal Article
44, pp. 297 - 305 (1987)
Electronic structure calculation of point defects in silicon. Comput. Phys. Comm.
Journal Article
47, pp. 349 - 350 (1987)
A new version of the program for the calculation of the Green's function for a crystal surface or interface. Comput. Phys. Comm.
Journal Article
146, pp. 176 - 186 (1987)
Lattice relaxations at substitutional impurities in semiconductors. Physica B/C
Journal Article
Parameter-free total-energy and force calculations for defects in semiconductors. Proc. 7th Int. School Defects in Crystals, pp. 3 - 22 (1987)
Journal Article
58, pp. 1456 - 1459 (1987)
Mechanisms of defect pairing in semiconductors: A study for chalcogens in silicon. Physical Review Letters