Publications of Matthias Scheffler
All genres
Journal Article (591)
Journal Article
131 (1), pp. 107 - 108 (1992)
Theory of the scanning tunneling microscope. Physica Status Solidi (A)
Journal Article
46 (16), pp. 10134 - 10145 (1992)
Self-consistent pseudopotential calculations for sodium adsorption on GaAs(110). Physical Review B
Journal Article
56-58, pp. 628 - 631 (1992)
Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface. Applied Surface Science
Journal Article
55, pp. 442 - 448 (1992)
Calculated surface energies of the 4d transition metals: A study of bond-cutting models. Applied Physics A
Journal Article
46 (8), pp. 4816 - 4829 (1992)
Trends of the surface relaxations, surface energies, and work functions of the 4d transition metals. Physical Review B
Journal Article
46 (24), pp. 16067 - 16080 (1992)
Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111). Physical Review B
Journal Article
69 (10), pp. 1532 - 1535 (1992)
Identification of stable and metastable adsorption sites for K adsorbed on Al(111). Physical Review Letters
Journal Article
4, pp. 2831 - 2844 (1992)
Self-consistent Green-function method for the calculation of electronic properties of localized defects at surfaces and in the bulk. Journal of Physics: Condensed Matter
Journal Article
44 (12), pp. 6188 - 6198 (1991)
Calculated atomic structures and electronic properties of GaP, InP, GaAs and InAs(110) surfaces. Physical Review B
Journal Article
44, pp. 8503 - 8513 (1991)
Analysis of fully separable potentials. Physical Review B
Journal Article
67, pp. 1031 - 1034 (1991)
Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes. Physical Review Letters
Journal Article
Ab-initio calculation of the effect of d-band occupation on the relaxation of transition metal surfaces. Proc. 75th We-Heraeus-Seminar and 21st Annual Internat. Symposium on Electronic Structure of Solids, pp. 174 - 176 (1991)
Journal Article
172, pp. 175 - 183 (1991)
Full-potential LMTO calculations for atomic relaxations at semiconductor-semiconductor interfaces. Physica B
Journal Article
43, pp. 12494 - 12506 (1991)
Formation energies, electronic structure, and hyperfine fields of chalcogen point defects and defect pairs in silicon. Physical Review B
Journal Article
172, pp. 143 - 153 (1991)
A self-consistent surface-Green-function (SSGF) method. Physica B
Journal Article
67, pp. 2163 - 2166 (1991)
Unusual chemisorption geometry of Na on Al(111). Physical Review Letters
Journal Article
65 (16), pp. 2046 - 2049 (1990)
Anion-antisite-like defects in III-V compounds. Physical Review Letters
Journal Article
51, pp. 281 - 288 (1990)
Theory of scanning tunneling microscopy. Applied Physics A
Journal Article
41 (17), pp. 12264 - 12267 (1990)
Ghost states for separable, norm-conserving, ab initio pseudopotentials. Physical Review B
Journal Article
41, pp. 1603 - 1624 (1990)
Electronic and Magnetic Structure of 3d-Transition-Metal Point Defects in Silicon Calculated from First Principles. Physical Review B