Publications of Jörg Neugebauer
All genres
Journal Article (65)
Journal Article
227 (1), pp. 93 - 114 (2001)
Ab initio analysis of surface structure and adatom kinetics of group-III nitrides. Physica Status Solidi B
Journal Article
19 (4), pp. 1619 - 1625 (2001)
Silicon on GaN(0001) and (0001) surfaces. Journal of Vacuum Science and Technology B
Journal Article
63 (24), 245205 (2001)
First-principles studies of beryllium doping of GaN. Physical Review B
Journal Article
63 (08), 085207 (2001)
Limits and accuracy of valence force field models for InxGa1-xN alloys. Physical Review B
Journal Article
6 (11), e11 (2001)
Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory. MRS Internet Journal of Nitride Semiconductor Research
Journal Article
85 (9), pp. 1902 - 1905 (2000)
Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces. Physical Review Letters
Journal Article
18 (4), pp. 2284 - 2289 (2000)
Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B
Journal Article
84 (25), pp. 5816 - 5819 (2000)
Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110). Physical Review Letters
Journal Article
159-160, pp. 355 - 359 (2000)
Theory of surfaces and interfaces of group-III nitrides. Applied Surface Science
Journal Article
61 (4), pp. 9932 - 9935 (2000)
Structure of GaN(0001): The laterally contracted Ga bilayer model. Physical Review B
Journal Article
76 (8), pp. 1009 - 1011 (2000)
Arsenic impurities in GaN. Applied Physics Letters
Journal Article
7 (5-6), pp. 601 - 606 (2000)
Surface morphology of GaN surfaces during molecular beam epitaxy. Surface Review and Letters
Journal Article
96 (5), pp. 613 - 627 (1999)
Defects and Defect Reactions in Semiconductor Nitrides. Acta Physica Polonica A
Journal Article
60 (12), pp. R8473 - R8476 (1999)
Indium induced changes in GaN(0001) surface morphology. Physical Review B
Journal Article
59 (1-3), pp. 253 - 257 (1999)
Doping of Al_xGa_1-xN alloys. Materials Science and Engineering B
Journal Article
74 (16), pp. 2319 - 2322 (1999)
Energetics of clean and In-covered GaN(1011) surfaces: Implications for inverted pyramid defect formation and the origin of chemical ordering in InGaN alloys. Applied Physics Letters
Journal Article
74 (12), pp. 1695 - 1697 (1999)
The adsorption of oxygen at GaN surfaces. Applied Physics Letters
Journal Article
423 (1), pp. 70 - 84 (1999)
GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations. Surface Science
Journal Article
166, p. 439 (1999)
New insights in doping of III-nitrides and their alloys. Institute of Physics Conference Series
Journal Article
4 (S1), pp. 901 - 912 (1999)
Doping of AlGaN alloys. MRS Internet Journal of Nitride Semiconductor Research