Publications of Jörg Neugebauer
All genres
Journal Article (65)
Journal Article
71 (4), pp. 577 - 580 (1993)
Mechanisms of island formation of alkali-metal adsorbates on Al(111). Physical Review Letters
Journal Article
5, pp. A91 - A94 (1993)
A step from surface fiction towards surface science. Journal of Physics: Condensed Matter
Journal Article
287/288, pp. 559 - 563 (1993)
Electronic structure of (3 x 3)-R30°-Na and -K on Al(111): comparison of "normal" and substitutional adsorption sites. Surface Science
Journal Article
46 (24), pp. 16067 - 16080 (1992)
Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111). Physical Review B
Journal Article
67, pp. 2163 - 2166 (1991)
Unusual chemisorption geometry of Na on Al(111). Physical Review Letters Book (1)
Book
GaN and related alloys—2001. Materials Research Society, Warrendale, PA (2002), 860 pp.
Book Chapter (9)
Book Chapter
Surface structure and adatom kinetics of group-III nitrides. In: Nitride Semiconductors: Handbook on Materials and Devices, pp. 295 - 318 (Eds. Ruterana, P.; Albrecht, M.). WILEY-VCH, Weinheim (2003)
Book Chapter
Stability, diffusion, and complex formation of beryllium in wurtzite GaN. In: GaN and Related Alloys - 2000, p. G4.3 (Eds. Wetzel, C.; Gil, B.). MRS, Pittsburgh (2001)
Book Chapter
Point defects on III-V semiconductor surfaces. In: Proceedings of the 25th International Conference on the Physics of Semiconductors: Osaka, Japan, September 17 - 22, 2000, pp. 1377 - 1380 (Eds. Miura, N.; Ando, T.). Springer, Berlin (2001)
Book Chapter
Modeling of structural and elastic properties of InxGa1-xN alloys. In: Materials Issues and Modeling for Device Nanofabrication, pp. 215 - 222 (Eds. Merhari, L.; Wille, L. T.; Gonsalves, K. E.; Gyure, M. F.; Matsui, S. et al.). Materials Research Society, Warrendale, PA (2000)
Book Chapter
Theory of hydrogen in GaN. In: Hydrogen in semiconductors II, pp. 479 - 502 (Ed. Nickel, N. H.). Acad. Press, Boston (1999)
Book Chapter
Hydrogen and acceptor compensation in GaN. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, pp. 317 - 321 (Eds. Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.). INSPEC (1999)
Book Chapter
Yellow luminescence in GaN. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, pp. 313 - 316 (Eds. Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.). INSPEC (1999)
Book Chapter
Native defects, impurities, and doping in GaN and related compounds: general remarks. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, pp. 275 - 280 (Eds. Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.) (1999)
Book Chapter
Native point defects in GaN and related compounds. In: Properties, processing and applications of gallium nitride and related semiconductors, pp. 281 - 283 (Eds. Edgar, J. H.; Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.). INSPEC, London (1999)
Conference Paper (6)
Conference Paper
Morphology and surface reconstructions of m-plane GaN. In: GaN and Related Alloys, p. L.4.1.1 (Ed. Wetzel, C.). MRS Fall Meeting: Symposium L – GaN and Related Alloys. Materials Research Society, Pittsburgh, Pa. (2003)
Conference Paper
Effects on stoichiometry on point defects and impurities in gallium nitride. In: Proceedings of the 4th Symposium on Non-Stoichiometric III-V Compounds, pp. 11 - 18 (Eds. Specht, P.; Weatherford, T.R.; Kiesel, P.; Marek, T.; Malzer, S.). 4th Symposium on Non-Stoichiometric III-V Compounds, Asilomar, CA, U.S.A., October 02, 2002 - October 04, 2002. University of Erlangen, Erlangen, Germany (2002)
Conference Paper
Phase stability and segregation of In_xGa_1-xN alloys. In: Proceedings 24th International Conference on the Physics of Semiconductors 1999 (Ed. David, G.). International Conference on the Physics of Semiconductors 1999, Jerusalem, August 02, 1998 - August 07, 1998. World Scientific, Singapore (1999)
Conference Paper
Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998, pp. 235 - 242 (Ed. Gershoni, D.). 24th International Conference on the Physics of Semiconductors, Jerusalem, Israel, August 02, 1998 - August 07, 1998. World Scientific, Singapore (1999)
Conference Paper
449, pp. 861 - 870. Symposium N – III-V Nitrides. (1997)
Theory of point defects and interfaces. In: MRS Proceedings, Vol.