Publications of Haiyuan Wang

Park, S., H. Wang, T. Schultz, D. Shin, R. Ovsyannikov, M. Zacharias, D. Maksimov, M. Meissner, Y. Hasegawa, T. Yamaguchi, S. Kera, A. Aljarb, M. Hakami, L.-J. Li, V. Tung, P. Amsalem, M. Rossi and N. Koch: Temperature-Dependent Electronic Ground-State Charge Transfer in van der Waals Heterostructures. Advanced Materials 33 (29), 2008677 (2021).

Wang, H., S.V. Levchenko, T. Schultz, N. Koch, M. Scheffler and M. Rossi: Modulation of the Work Function by the Atomic Structure of Strong Organic Electron Acceptors on H‐Si(111). Advanced Electronic Materials 5 (5), 1800891 (2019).

Park, D.S., G.J. Rees, H. Wang, D. Rata, A.J. Morris, I.V. Maznichenko, S. Ostanin, A. Bhatnagar, C.J. Choi, R.D.B. Jónsson, K. Kaufmann, R. Kashtiban, M. Walker, C.T. Chiang, E.B. Thorsteinsson, Z. Luo, I.S. Park, J.V. Hanna, I. Mertig, K. Dörr, H.P. Gíslason and C.F. McConville: Electromagnetic Functionalization of Wide‐Bandgap Dielectric Oxides by Boron Interstitial Doping. Advanced Materials 30 (39), 1802025 (2018).