Publications of Matthias Scheffler

Oppo, S.; Fiorentini, V.; Scheffler, M.: Theory of adsorption and surfactant effect of Sb on Ag(111). Physical Review Letters 71 (15), pp. 2437 - 2440 (1993)

Pankratov, O.; Scheffler, M.: Electron correlations on a potassium-covered GaAs(110) surface: ab-initio calculations of the Hubbard correlation energy. Surface Science 287/288 (2), pp. 584 - 587 (1993)

Pankratov, O.; Scheffler, M.: Bound bipolaron at the surface: The negative-U behavior of GaAs(110) with adsorbed alkali metals. Physical Review Letters 71 (17), pp. 2797 - 2800 (1993)

Pankratov, O.; Scheffler, M.: Hubbard correlations and charge transfer at the GaAs(110) surface with alkali adsorbates. Physical Review Letters 70 (3), pp. 351 - 354 (1993)

Pehlke, E.; Scheffler, M.: Evidence for site-sensitive screening of core holes at the Si and Ge(001) surface. Physical Review Letters 71 (14), pp. 2338 - 2341 (1993)

Polatoglou, H. M.; Methfessel, M.; Scheffler, M.: Vacancy-formation energies at the (111) surface and in bulk Al, Cu, Ag, and Rh. Physical Review B 48 (3), pp. 1877 - 1883 (1993)

Scheffler, M.; Neugebauer, J.; Stumpf, R.: A step from surface fiction towards surface science. Journal of Physics: Condensed Matter 5, pp. A91 - A94 (1993)

Stampfl, C.; Burchhardt, J.; Nielsen, M.; Adams, D. L.; Scheffler, M.; Over, H.; Moritz, W.: The structure of Al(111)-K-(√3 × √3)R30° determined by LEED: stable and metastable adsorption sites. Surface Science 287/288, pp. 418 - 422 (1993)

Wenzien, B.; Bormet, J.; Neugebauer, J.; Scheffler, M.: Electronic structure of (3 x 3)-R30°-Na and -K on Al(111): comparison of "normal" and substitutional adsorption sites. Surface Science 287/288, pp. 559 - 563 (1993)

Ziegler, C.; Scherz, U.; Scheffler, M.: Pressure dependence of deep levels of the As antisite, the Ga-vacancy-As-interstitial pair, and of the stable and metastable states of EL2. Physical Review B 47 (24), pp. 16624 - 16627 (1993)

Ourmazd, A.; Scheffler, M.; Heinemann, M.; Rouviere, J.-L.: Microscopic Properties of Thin Films: Learning About Point Defects. MRS Bulletin 17, pp. 24 - 31 (1992)

Dabrowski, J.; Scheffler, M.: Self-consistent study of the electronic and structural properties of the clean Si(001) (2x1) surface. Applied Surface Science 56-58, pp. 15 - 19 (1992)

Dabrowski, J.; Scheffler, M.: Theory of defect metastabilities in III-V compounds. Physica Scripta T45, pp. 151 - 153 (1992)

Dabrowski, J.; Scheffler, M.: Defect metastability in III-V compounds. Mat. Sci. Forum 83-87, pp. 735 - 750 (1992)

Doyen, G.; Drakova, D.; Mujica, V.; Scheffler, M.: Theory of the scanning tunneling microscope. Physica Status Solidi (A) 131 (1), pp. 107 - 108 (1992)

Hebenstreit, J.; Scheffler, M.: Self-consistent pseudopotential calculations for sodium adsorption on GaAs(110). Physical Review B 46 (16), pp. 10134 - 10145 (1992)

Heinemann, M.; Scheffler, M.: Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface. Applied Surface Science 56-58, pp. 628 - 631 (1992)

Methfessel, M.; Hennig, D.; Scheffler, M.: Calculated surface energies of the 4d transition metals: A study of bond-cutting models. Applied Physics A 55, pp. 442 - 448 (1992)

Methfessel, M.; Hennig, D.; Scheffler, M.: Trends of the surface relaxations, surface energies, and work functions of the 4d transition metals. Physical Review B 46 (8), pp. 4816 - 4829 (1992)

Neugebauer, J.; Scheffler, M.: Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111). Physical Review B 46 (24), pp. 16067 - 16080 (1992)