Publications of Matthias Scheffler

Stampfl, C.; Scheffler, M.; Over, H.; Burchhardt, J.; Nielsen, M.; Adams, D. D.; Moritz, W.: LEED structural analysis of Al(111)-K(√3 x √3)R30°: Identification of stable and metastable adsorption sites. Physical Review B 49 (7), pp. 4959 - 4972 (1994)

Stumpf, R.; Scheffler, M.: Mechanisms of self-diffusion on flat and stepped Al surfaces. Surface Science 307-309 (Part A), pp. 501 - 506 (1994)

Stumpf, R.; Scheffler, M.: Simultaneous calculation of the equilibrium atomic structure and its electronic ground state using density-functional theory. Computer Physics Communications 79 (3), pp. 447 - 465 (1994)

Stumpf, R.; Scheffler, M.: Theory of self-diffusion at and growth of Al(111). Physical Review Letters 72 and 73, pp. 254 and 508 - 257 and 508 (1994)

Wilke, S.; Hennig, D.; Löber, R.; Methfessel, M.; Scheffler, M.: Ab-initio study of hydrogen adsorption on Pd(100). Surface Science 307-309, pp. 76 - 81 (1994)

Yamada, K.; Kraft, T.; Aisaka, T.; Ishii, A.; Scheffler, M.: Spin- and angle-resolved UPS spectrum calculation for ferromagnetic Nickel. Trans. Mat. Res. Soc. Jpn. 16A, pp. 259 - 262 (1994)

Ziegler, C.; Scherz, U.; Scheffler, M.: Pressure dependences of transition energies of the As antisite and the Ga-vacancy-As-interstitial pair compared to stable and metastable EL2. Materials Science Forum 143-147, pp. 995 - 1000 (1994)

Aristov, V. Y.; Bertolo, M.; Jacobi, K.; Maca, F.; Scheffler, M.: Experimental and theoretical investigation of the electronic structure of silver deposited onto InSb(110) at 10 K. Physical Review B 48 (8), pp. 5555 - 5566 (1993)

Bechstedt, F.; Scheffler, M.: Alkali adsorption on GaAs(110): atomic structure, electronic states and surface dipoles. Surface Science Reports 18 (5-6), pp. 145 - 198 (1993)

Doyen, G.; Drakova, D.; Scheffler, M.: Green-function theory of scanning tunneling microscopy: Tunnel current and current density for clean metal surfaces. Physical Review B 47 (15), pp. 9778 - 9790 (1993)

Fiorentini, V.; Methfessel, M.; Scheffler, M.: Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons. Physical Review B 47 (20), pp. 13353 - 13362 (1993)

Fiorentini, V.; Methfessel, M.; Scheffler, M.: Reconstruction mechanism of fcc transition metal (001) surfaces. Physical Review Letters 71 (7), pp. 1051 - 1054 (1993)

Hennig, D.; Methfessel, M.; Scheffler, M.: Ab-initio calculation of the initial- and final-state effects on core-level shifts at transition metal surfaces. International Journal of Modern Physics B 7 (1-3), pp. 542 - 545 (1993)

Kraft, T.; Marcus, P. M.; Methfessel, M.; Scheffler, M.: Elastic constants of Cu and the instability of its bcc structure. Physical Review B 48 (9), pp. 5886 - 5890 (1993)

Kraft, T.; Methfessel, M.; van Schilfgaarde, M.; Scheffler, M.: Elastic properties of strained fcc and hcp iron. International Journal of Modern Physics B 7 (1-3), pp. 207 - 211 (1993)

Kraft, T.; Methfessel, M.; van Schilfgaarde, M.; Scheffler, M.: Effect of substrate-imposed strain on the growth of metallic overlayers calculated for fcc and hcp iron. Physical Review B 47 (15), pp. 9862 - 9869 (1993)

Methfessel, M.; Hennig, D.; Scheffler, M.: Ab-initio calculations of the initial- and final-state effects on the surface core-level shift of transition metals. Surface Science 287/288 (2), pp. 785 - 788 (1993)

Methfessel, M.; van Schilfgaarde, M.; Scheffler, M.: Electronic structure and bonding in the metallocarbohedrene Ti₈C₁₂. Physical Review Letters 70 (1), pp. 29 - 32 (1993)

Neugebauer, J.; Scheffler, M.: Theory of adsorption and desorption in high electric fields. Surface Science 287/288 (2), pp. 572 - 576 (1993)

Neugebauer, J.; Scheffler, M.: Mechanisms of island formation of alkali-metal adsorbates on Al(111). Physical Review Letters 71 (4), pp. 577 - 580 (1993)