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Conference Paper (278)
1997
Conference Paper
, , , Hellmut G. Karge and : The induction period in ethylbenzene disproportionation over large pore zeolites.
(11th International Zeolite Conference, Seoul, Korea, Aug 1996).
Conference Paper
, Klaus Hermann, and : Cluster studies on adsorption and reactions at the V2O5(010) surface.
(Symposium on Studies on Heavy Hydrocarbon Conversion ).
Conference Paper
Wrabetz, Sabine, Uwe Guntow, Robert Schlögl and Hellmut G. Karge: Preparation and characterisation of ru-exchanged NaY zeolite: An infrared study of CO adsorption at low temperatures.
(11th International Zeolite Conference, Seoul, Korea, Aug 1996).
Conference Paper
, , and Hellmut G. Karge: Catalytic decomposition of organic sulfur compounds—effect of zeolite acidity.
(11th International Zeolite Conference, Seoul, Korea, Aug 1996).
1996
Conference Paper
, Axel Groß, , and : Reaction Dynamics of H2/Si: A 5-D Model.
(18th Taniguchi Symposium, Kashikojima, Japan, Jan 1996).
Conference Paper
Groß, Axel, Michel Bockstedte and Matthias Scheffler: Ab initio Molecular Dynamics Study of D2 Desorption from Si(100).
(International Conference on the Physics of Semiconductors (ICPS), Berlin, Jul 1996).
Conference Paper
Kley, Alexander and Matthias Scheffler: Diffusivity of Ga and Al adatoms on GaAs(001).
(International Conference on the Physics of Semiconductors (ICPS), Berlin, Germany, Jul 1996).
Conference Paper
, Ari Paavo Seitsonen and : Ab-initio study of nitrogen antisites in GaN and InN.
(III-V nitride materials and processes, Los Angeles, CA, May 1996).
Conference Paper
Muhler, Martin, Frank Rosowski, Olaf Hinrichsen, Alessandra Hornung and Gerhard Ertl: Ruthenium as catalyst for ammonia synthesis.
(11th International Congress On Catalysis - 40th Anniversary, Baltimore, MD, USA, Jun 1996).
Conference Paper
Neugebauer, Jörg and : Role of defects and impurities in doping of GaN.
(International Conference on the Physics of Semiconductors (ICPS), Berlin, Jul 1996).
Conference Paper
Pehlke, E.: Surface stress and the mesoscopic structure of solid surfaces.
Conference Paper
Pehlke, Eckard, Nikolaj Moll and Matthias Scheffler: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate.
(International Conference on the Physics of Semiconductors, Berlin, Germany, Jul 1996).
1995
Conference Paper
Allongue, Philippe, and Heinz Gerischer: Etching mechanism and atomic structure of H–Si(111) surfaces prepared in NH4F.
(6th Int. Fischer Symposium on Nanotechniques in Electrochemistry, Univ Karlsruhe, Karlsruhe, Germany, Jun 1994).
Conference Paper
Ruggerone, Paolo, Bernd Kohler, and Matthias Scheffler: Electronic origin of the H-induced phonon anomalies on Mo(110).
(134th W.-E.-Heraeus-Seminar, Honnef, Oct 1994).
1994
Conference Paper
, , , and Robert Schlögl: Susceptibility Study of Site Selective Doped Fullerenes - K2RbC60, Rb3C60, K2CsC60, and Rb2CsC60.
Conference Paper
Heinemann, Martina and Matthias Scheffler: The formation of a Schottky barrier: Na on GaAs(110).
(4th International Conference on the Formation of Semiconductor Interfaces (ICFSI), Jülich, Germany, Jun 1993).
Conference Paper
Oppo, Sabrina, Vincenzo Fiorentini and Matthias Scheffler: Surface alloying and surfactant action of Sb on Ag(111).
1993
Conference Paper
, Vincenzo Fiorentini, and : Pseudohamiltonians and Quantum Monte Carlo.
(Materials theory and modelling : symposium, Boston, Nov 1992).
Conference Paper
Gerischer, Heinz: Conditions for an efficient photocatalytic activity of TiO2 particles.
(First Int. Conf. on TiO(2) Photocatalytic Purification and Treatment of Water and Air, London, Canada, Nov 1992).
Conference Paper
and Hans-Joachim Freund: Adsorption and Reaction of Small Molecules on Oxide Surfaces.
(Australian-German Workshop, Sydney, Australia, Dec 1991).