Publications of Karsten Horn

Journal Article (160)

1994
Journal Article
Evans, D.A. and Karsten Horn: Quantisation of valence states observed in small Ag islands on the GaAs(110) surface.
Journal Article
Öfner, H., R. Hofmann, J. Kraft, F.P. Netzer, Jens Paggel and Karsten Horn: Metal-overlayer-induced charge-transfer effects in thin SiO2-Si structures.
Journal Article
Paggel, Jens, Wolfgang Theis, Karsten Horn, Ch. Jung, C. Hellwig and H. Petersen: Correlation of surface core levels and structural building blocks for the Si(111)-7×7 reconstruction through high-resolution core-level spectroscopy.
1991
Journal Article
Alonso, M., R. Cimino and Karsten Horn: Surface photovoltage effects in photoemission from metal/GaP(110) interfaces: Temperature‐dependent Fermi level movement.
Journal Article
Chassé, Thomas, Wolfgang Theis, T.P. Chen, D.A. Evans, Karsten Horn, C. Pettenkofer and W. Jaegermann: Interface chemistry and band bending induced by Pt deposition onto GaP(110).
Journal Article
Henle, W.A., M.G. Ramsey, F.P. Netzer and Karsten Horn: Reversible Eu2+ ↔ Eu3+ transitions at Eu‐Si interfaces.
Journal Article
Maierhofer, Christiane, S. Kulkarni, Maria Alonso, T. Reich and Karsten Horn: Valence band offset in ZnS layers on Si(111) grown by molecular beam epitaxy.
Journal Article
van Acker, J.F., P.J.W. Weijs, J.C. Fuggle, Karsten Horn, Henrik Haak and K.H.J. Buschow: Photoemission investigation of the electronic structure of Fe-Pd and Fe-Pt alloys.
Journal Article
Zahn, D.R.T., Christiane Maierhofer, A. Winter, M. Reckzügel, R. Srama, A. Thomas, Karsten Horn and W. Richter: The growth of cubic CdS on InP(110) studied in situ by Raman spectroscopy.
1990
Journal Article
Alonso, Maria, Roberto Cimino and Karsten Horn: Surface photovoltage effects in photoemission from metal-GaP(110) interfaces: Importance for band bending evaluation.
Journal Article
Alonso, Maria, Roberto Cimino, Karsten Horn, Thomas Chasse and Walter Braun: Temperature-dependent interface formation study of aluminium on GaP(110).
Journal Article
Alonso, Maria, Roberto Cimino, Christiane Maierhofer, Thomas Chasse, W. Braun and Karsten Horn: Schottky barrier heights and interface chemistry in Ag, In, and Al overlayers on GaP(110).
Journal Article
Chasse, Th, Maria Alonso, Roberto Cimino, Karsten Horn and W. Braun: Indium interaction with GaP (110): example of an unreacted interface.
Journal Article
Horn, Karsten: Semiconductor interface studies using core and valence level photoemission.
Journal Article
Wilke, Wolfgang G., Christiane Maierhofer and Karsten Horn: Test of band offset commutativity by photoemission from an in situ grown ZnTe/CdS/ZnTe quantum well.
Journal Article
Wilke, Wolfgang G., R. Seedorf and Karsten Horn: Valence band offset and interface chemistry of II–VI epitaxial layers grown on the (110) surface of III–V materials.
1979
Journal Article
Hoffmann, P., C.v. Muschwitz, Karsten Horn, Karl Jacobi, Alexander M. Bradshaw, K. Kambe and Matthias Scheffler: Angular-resolved photoemission from an ordered oxygen overlayer on aluminium (111).
Journal Article
Scheffler, Matthias, Karsten Horn, Alexander M. Bradshaw and Kyozaburo Kambe: Angular-resolved photoemission from physisorbed xenon.
1978
Journal Article
Horn, Karsten, Matthias Scheffler and Alexander M. Bradshaw: Photoemission from physisorbed xenon: Evidence for lateral interactions.
Journal Article
Scheffler, Matthias, Karsten Horn, Alexander M. Bradshaw and K. Kambe: Photoemission from physisorbed xenon.
Go to Editor View