Publications of M. Scheffler
All genres
Journal Article (590)
1989
Journal Article
, M. Scheffler and : Ab-initio calculations of hyperfine fields for chalcogen point defects and defect pairs in silicon: Identification of the pair atomic structure.
Journal Article
Scheffler, M.: Chemical binding, stability and metastability of defects in semiconductors.
Journal Article
, and M. Scheffler: Electronic and vibrational properties of deep centers in semiconductors.
Journal Article
, M. Scheffler and : Parameter-free calculations of the pressure dependence of impurity levels, entropies and of defect-formation volumes.
1988
Journal Article
and M. Scheffler: Ab-initio calculations for native point defects in GaAs.
Journal Article
and M. Scheffler: The EL2 defect in GaAs.
Journal Article
and M. Scheffler: Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2.
Journal Article
and M. Scheffler: Calculation of electronic structure for a crystal surface or interface.
Journal Article
and M. Scheffler: Surface Green's function for a rumpled crystal surface.
Journal Article
, , , M. Scheffler and : Electronic structure of fcc and bcc close-packed silver surfaces.
Journal Article
Scheffler, M.: Thermodynamic aspects of bulk and surface defects - first-principle calculations.
Journal Article
Scheffler, Matthias and Jarek Dabrowski: Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors.
Journal Article
, and M. Scheffler: Total-energy calculation for isolated oxygen impurities in silicon.
1987
Journal Article
, and M. Scheffler: Electronic structure calculation of 3d and 4d transition metal point defects in silicon.
Journal Article
, , , and M. Scheffler: Electronic structure calculation of point defects in silicon.
Journal Article
and M. Scheffler: A new version of the program for the calculation of the Green's function for a crystal surface or interface.
Journal Article
Scheffler, M.: Lattice relaxations at substitutional impurities in semiconductors.
Journal Article
Scheffler, M., , , and : Parameter-free total-energy and force calculations for defects in semiconductors.
Journal Article
and M. Scheffler: Mechanisms of defect pairing in semiconductors: A study for chalcogens in silicon.
1985
Journal Article
and M. Scheffler: No large lattice relaxations around the arsenic antisite in GaAs.