Publications of Matthias Scheffler
All genres
Conference Paper (27)
1999
Conference Paper
Grosse, F., Jörg Neugebauer and Matthias Scheffler: Phase stability and segregation of In_xGa_1-xN alloys.
(International Conference on the Physics of Semiconductors 1999, Jerusalem, Aug 1998).
Conference Paper
Neugebauer, Jörg, Tosja K. Zywietz, Matthias Scheffler and : Surfaces and growth of group-III nitrides.
(24th International Conference on the Physics of Semiconductors, Jerusalem, Israel, Aug 1998).
1997
Conference Paper
Groß, Axel and Matthias Scheffler: Steering and Isotope Effects in the Dissociative Adsorption of H2/Pd(100).
(Conference on Frontiers in Materials Modelling and Design, Kalpakkam, Aug 1996).
Conference Paper
Pehlke, Eckard, Nikolaj Moll and Matthias Scheffler: The equilibrium shape of quantum dots.
(VI Italian-Swiss Workshop on, S. Margherita di Pula, (Cagliari), Sep 1996).
Conference Paper
Petersen, Max, Paolo Ruggerone and Matthias Scheffler: He scattering from metal surfaces.
(Italian Swiss Workshop Advances in Computational Science, Cagliari, Sep 1996).
Conference Paper
Ruggerone, Paolo, Alexander Kley and Matthias Scheffler: Microscopic processes behind metal homoepitaxy.
(Italian Swiss Workshop on Advances in Computational Materials Science, Cagliari, Sep 1996).
1996
Conference Paper
Groß, Axel, Michel Bockstedte and Matthias Scheffler: Ab initio Molecular Dynamics Study of D2 Desorption from Si(100).
(International Conference on the Physics of Semiconductors (ICPS), Berlin, Jul 1996).
Conference Paper
Kley, Alexander and Matthias Scheffler: Diffusivity of Ga and Al adatoms on GaAs(001).
(International Conference on the Physics of Semiconductors (ICPS), Berlin, Germany, Jul 1996).
Conference Paper
Pehlke, Eckard, Nikolaj Moll and Matthias Scheffler: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate.
(International Conference on the Physics of Semiconductors, Berlin, Germany, Jul 1996).
1995
Conference Paper
Ruggerone, Paolo, Bernd Kohler, and Matthias Scheffler: Electronic origin of the H-induced phonon anomalies on Mo(110).
(134th W.-E.-Heraeus-Seminar, Honnef, Oct 1994).
1994
Conference Paper
Heinemann, Martina and Matthias Scheffler: The formation of a Schottky barrier: Na on GaAs(110).
(4th International Conference on the Formation of Semiconductor Interfaces (ICFSI), Jülich, Germany, Jun 1993).
Conference Paper
Oppo, Sabrina, Vincenzo Fiorentini and Matthias Scheffler: Surface alloying and surfactant action of Sb on Ag(111).
1992
Conference Paper
, Eckhard Pehlke and Matthias Scheffler: DFT-LDA calculations ofsurface core-level shifts for Si(001), Ge(001), and Ge on Si(001) (2x1) surfaces.
(21st International Conference on the Physics of Semiconductors (ICPS-21), Beijing, China, Aug 1992).
1985
Conference Paper
, Matthias Scheffler and Werner Berndt: A LEED analysis of sqrt{3} x sqrt{3} S on Pd(111).
1981
Conference Paper
, , and Matthias Scheffler: Theory of point defects and deep impurities in semiconductors.
(11th International Conference on Defects and Radiation Effects in Semiconductors, Oiso, Japan, Sep 1980).
1977
Conference Paper
Scheffler, Matthias, , and Karl Jacobi: Angle-resolved photoemission of the oxygen overlayer on Ni,(001): Part 1 (Calculations).
(7th International Vacuum Congress, Vienna, Austria, Sep 1977).
1976
Conference Paper
Scheffler, Matthias, and : Energy and angle-resolved photoemission.
Talk (209)
2025
Talk
Scheffler, Matthias: Density Functional Theory and Artificial Intelligence in Materials Science.
(Seminar, Condensed Matter Theory Group, The University of Sydney, Sydney, Australia, Jan 2025).
Talk
Scheffler, Matthias: Artificial Intelligence in Materials Science.
(Colloquium, School of Physics, The University of Sydney, Sydney, Australia, Jan 2025).
Talk
Scheffler, Matthias: Artificial Intelligence for Materials Science.
(DPG Spring Meeting 2025, Regensburg, Germany, Mar 2025).