Publications of Matthias Scheffler
All genres
Journal Article (599)
1984
Journal Article
Scheffler, Matthias, , and : Electronic structure and identification of deep defects in GaP.
1983
Journal Article
, , Matthias Scheffler and : Multivacancies, interstitials, and self-interstitial migration in Si.
Journal Article
, Matthias Scheffler and : Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors.
1982
Journal Article
, , and Matthias Scheffler: Electronic structure of deep sp-bonded impurities in silicon.
Journal Article
Scheffler, M., and : Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP.
Journal Article
and Matthias Scheffler: Determination of deep donor binding energies from their g-values.
1981
Journal Article
Scheffler, Matthias, , and : Identification and properties of native defects in GaP.
1980
Journal Article
and Matthias Scheffler: Photoemission and the electronic structure of a c(2x2) sulfur adsorbate-layer on Pd.
1979
Journal Article
Bradshaw, A.M. and M. Scheffler: Lateral interactions in adsorbed layers.
Journal Article
, , Karsten Horn, Karl Jacobi, Alexander M. Bradshaw, and Matthias Scheffler: Angular-resolved photoemission from an ordered oxygen overlayer on aluminium (111).
Journal Article
and Matthias Scheffler: Theory of photoexcitation of adsorbates.
Journal Article
Scheffler, M.: The influence of lateral interactions on the vibrational spectrum of adsorbed CO.
Journal Article
Scheffler, Matthias, Karsten Horn, Alexander M. Bradshaw and Kyozaburo Kambe: Angular-resolved photoemission from physisorbed xenon.
1978
Journal Article
Horn, Karsten, Matthias Scheffler and Alexander M. Bradshaw: Photoemission from physisorbed xenon: Evidence for lateral interactions.
Journal Article
Scheffler, Matthias, Karsten Horn, Alexander M. Bradshaw and : Photoemission from physisorbed xenon.
Journal Article
Scheffler, M., and : Angle-resolved photoemission from adsorbates: Theoretical considerations of polarization effects and symmetry.
1977
Journal Article
Jacobi, Karl, Matthias Scheffler, and : Angle-resolved photoemission from the p(2x2) oxygen overlayer on Ni(001): Measurements and calculations.
Journal Article
Jacobi, Karl, Matthias Scheffler, and : Angle-resolved photoemission of the oxygen overlayer on Ni(001): Part 2 (Experiments).
Journal Article
and M. Scheffler: Electronic properties of strained bonds in amorphous silicon: The origin of the band-tail states.
Book (4)
2022
Book
, , Matthias Scheffler, and : Open Research Data in Naturwissenschaften und Mathematik: Empfehlungen der mathematisch-naturwissenschaftlichen Klasse der BBAW.