Publications of Matthias Scheffler
All genres
Journal Article (599)
1988
Journal Article
Scheffler, Matthias and Jarek Dabrowski: Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors.
Journal Article
, and M. Scheffler: Total-energy calculation for isolated oxygen impurities in silicon.
1987
Journal Article
, and M. Scheffler: Electronic structure calculation of 3d and 4d transition metal point defects in silicon.
Journal Article
, , , and M. Scheffler: Electronic structure calculation of point defects in silicon.
Journal Article
and M. Scheffler: A new version of the program for the calculation of the Green's function for a crystal surface or interface.
Journal Article
Scheffler, M.: Lattice relaxations at substitutional impurities in semiconductors.
Journal Article
Scheffler, M., , , and : Parameter-free total-energy and force calculations for defects in semiconductors.
Journal Article
and M. Scheffler: Mechanisms of defect pairing in semiconductors: A study for chalcogens in silicon.
1985
Journal Article
and M. Scheffler: No large lattice relaxations around the arsenic antisite in GaAs.
Journal Article
, and M. Scheffler: Electronic structure calculation of 3d-transition metal point defects in silicon.
Journal Article
, and Matthias Scheffler: Theoretical evidence for low-spin ground states of early interstitial and late substitutional 3d transition-metal ions in silicon.
Journal Article
, Matthias Scheffler, and : Identifiaction of chalcogen defects in silicon.
Journal Article
, M. Scheffler, and : Identification of chalcogen point-defects sites in silicon by total-energy calculations.
Journal Article
and M. Scheffler: Calculation of the Green's function for a crystal surface or interface.
Journal Article
, Matthias Scheffler and Werner Berndt: The adsorption of sulphur on Pd(111). I: A LEED analysis of the (sqrt{2} x sqrt{3}) R 30° adsorbate structure.
Journal Article
, and Matthias Scheffler: As_Ga-induced dichroism in GaAs.
Journal Article
Scheffler, M., , , , and : Chemical bonding and lattice relaxations of deep-level defects.
Journal Article
Scheffler, M., and : Total-energy gradients and lattice distortions at point defects in semiconductors.
1984
Journal Article
and M. Scheffler: Angle-resolved photoemission and the electronic structure of Pd(111).
Journal Article
, and M. Scheffler: Optical properties of As antisite and EL2 defects in GaAs.