Publications of M. Scheffler

Journal Article (599)

1990
Journal Article
Vigneron, J.P., M. Scheffler, Th. Laloyaux, I. Derycke and A.A. Lucas: Spatial Electron Current Distribution in a Scanning Tunneling Microscope.
1989
Journal Article
Beeler, F. and M. Scheffler: Calculation of total energies, reaction and diffusion processes of transition-metal point defects in silicon.
Journal Article
Beeler, F. and M. Scheffler: Theory of 4d-transition-metal ions in silicon: Total-energies, diffusion, electronic and magnetic properties.
Journal Article
Biernacki, S. and Matthias Scheffler: Negative thermal expansion of diamond and zinc-blende semiconductors.
Journal Article
Biernacki, S., U. Scherz, R. Gillert and M. Scheffler: Calculated thermodynamic potentials for the vacancy and the oxygen a-center in silicon.
Journal Article
Dabrowski, J. and M. Scheffler: The As_Ga-As_i pair in GaAs, the arsenic antisite and the properties of EL2.
Journal Article
Dabrowski, J. and M. Scheffler: The EL2 defect in GaAs.
Journal Article
Dabrowski, J. and M. Scheffler: The isolated arsenic antisite defect in GaAs and the properties of EL2.
Journal Article
Overhof, H., M. Scheffler and C.M. Weinert: Computation of hyperfine interactions for substitutional Se^+ and S^+ impurities in silicon.
Journal Article
Overhof, H., M. Scheffler and C.M. Weinert: Ab-initio calculations of hyperfine fields for chalcogen point defects and defect pairs in silicon: Identification of the pair atomic structure.
Journal Article
Scheffler, M.: Chemical binding, stability and metastability of defects in semiconductors.
Journal Article
Scherz, U., D. Weider and M. Scheffler: Electronic and vibrational properties of deep centers in semiconductors.
Journal Article
Weider, D., M. Scheffler and U. Scherz: Parameter-free calculations of the pressure dependence of impurity levels, entropies and of defect-formation volumes.
1988
Journal Article
Dabrowski, J. and M. Scheffler: Ab-initio calculations for native point defects in GaAs.
Journal Article
Dabrowski, J. and M. Scheffler: The EL2 defect in GaAs.
Journal Article
Dabrowski, J. and M. Scheffler: Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2.
Journal Article
Máca, F. and M. Scheffler: Calculation of electronic structure for a crystal surface or interface.
Journal Article
Máca, F. and M. Scheffler: Surface Green's function for a rumpled crystal surface.
Journal Article
Said, M., F. Máca, K. Kambe, M. Scheffler and N.E. Christensen: Electronic structure of fcc and bcc close-packed silver surfaces.
Journal Article
Scheffler, M.: Thermodynamic aspects of bulk and surface defects - first-principle calculations.
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