Publications of Matthias Scheffler

Journal Article (599)

1991
Journal Article
Methfessel, Michael and Matthias Scheffler: Full-potential LMTO calculations for atomic relaxations at semiconductor-semiconductor interfaces.
Journal Article
Overhof, H., Matthias Scheffler and C.C. Weinert: Formation energies, electronic structure, and hyperfine fields of chalcogen point defects and defect pairs in silicon.
Journal Article
Scheffler, Matthias, Ch. Droste, Andrzej Fleszar, F. Máca, G. Wachutka and G. Barzel: A self-consistent surface-Green-function (SSGF) method.
Journal Article
Schmalz, A., S. Aminpirooz, L. Becker, J. Haase, Jörg Neugebauer, Matthias Scheffler, D.R. Batchelor, D.L. Adams and E. Bogh: Unusual chemisorption geometry of Na on Al(111).
1990
Journal Article
Beeler, F., O.K. Andersen and M. Scheffler: Electronic and Magnetic Structure of 3d-Transition-Metal Point Defects in Silicon Calculated from First Principles.
Journal Article
Biernacki, S. and M. Scheffler: First-principles calculations of thermodynamic potentials of perfect-crystal semiconductors and for defects in semiconductors.
Journal Article
Caldas, M.J., J. Dabrowski, A. Fazzio and Matthias Scheffler: Anion-antisite-like defects in III-V compounds.
Journal Article
Caldas, M.J., J. Dabrowski, A. Fazzio and M. Scheffler: Anion-Antisite-like Defects in III-V Compounds.
Journal Article
Caldas, M.J., J. Dabrowski, A. Fazzio and M. Scheffler: Anion-Antisite-like Defects in III-V Compounds.
Journal Article
Caldas, M.J., A. Fazzio, J. Dabrowski and M. Scheffler: Anion-Antisite Defects in GaAs: As and Sb.
Journal Article
Dabrowski, J., M. Scheffler and R. Strehlow: Silicon Donor in Gallium Arsenide and its Relation to DX Centers.
Journal Article
Doyen, G., Erich Koetter, J.P. Vigneron and Matthias Scheffler: Theory of scanning tunneling microscopy.
Journal Article
Doyen, G., Erich Koetter, J.P. Vigneron and Matthias Scheffler: Theory of Scanning Tunneling Microscopy.
Journal Article
Gonze, Xavier, Peter Käckell and Matthias Scheffler: Ghost states for separable, norm-conserving, ab initio pseudopotentials.
Journal Article
Gonze, X., Peter Käckell and Matthias Scheffler: Ghost States for Separable, Norm-Conserving, Ab-Initio Pseudopotentials.
Journal Article
Hebenstreit, J., M. Heinemann and Matthias Scheffler: Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs(110).
Journal Article
Hebenstreit, J., M. Heinemann and Matthias Scheffler: Calculated Surface Geometries and Electronic Structures for Clean and Sodium Covered GaAs(110) Surfaces.
Journal Article
Maca, F., Mansur Said, Kyozaburo Kambe and Matthias Scheffler: Electronic structure and angular resolved photoemission calculations for fcc and bcc silver surfaces.
Journal Article
Máca, F., M. Said, K. Kambe and M. Scheffler: Electronic Structure and Angular Resolved Photoemission Calculations for fcc and bcc Silver Surfaces.
Journal Article
Methfessel, Michael, B.K. Agrawal and Matthias Scheffler: The Influence of Structural Relaxation on the Valence-Band Offset at Semiconductor-Semiconductor Interfaces.
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