Publications of Matthias Scheffler

Journal Article (604)

1985
Journal Article
Meyer, B.K., J.-M. Spaeth and Matthias Scheffler: As_Ga-induced dichroism in GaAs.
Journal Article
Scheffler, M., F. Beeler, O. Jepsen, O. Gunnarsson, O.K. Andersen and G.B. Bachelet: Chemical bonding and lattice relaxations of deep-level defects.
Journal Article
Scheffler, M., J.P. Vigneron and G.B. Bachelet: Total-energy gradients and lattice distortions at point defects in semiconductors.
1984
Journal Article
Hora, R. and M. Scheffler: Angle-resolved photoemission and the electronic structure of Pd(111).
Journal Article
Meyer, B.K., J.-M. Spaeth and M. Scheffler: Optical properties of As antisite and EL2 defects in GaAs.
Journal Article
Scheffler, Matthias, J. Bernholc, N.O. Lipari and Sokrates T. Pantelides: Electronic structure and identification of deep defects in GaP.
1983
Journal Article
Pantelides, Sokrates T., I. Ivanov, Matthias Scheffler and J.P. Vigneron: Multivacancies, interstitials, and self-interstitial migration in Si.
Journal Article
Vigneron, J.P., Matthias Scheffler and Sokrates T. Pantelides: Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors.
1982
Journal Article
Bernholc, J., N.O. Lipari, Sokrates T. Pantelides and Matthias Scheffler: Electronic structure of deep sp-bonded impurities in silicon.
Journal Article
Scheffler, M., J.P. Vigneron and G.B. Bachelet: Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP.
Journal Article
Schirmer, O. and Matthias Scheffler: Determination of deep donor binding energies from their g-values.
1981
Journal Article
Scheffler, Matthias, Sokrates T. Pantelides, N.O. Lipari and J. Bernholc: Identification and properties of native defects in GaP.
1980
Journal Article
Hora, Ralf and Matthias Scheffler: Photoemission and the electronic structure of a c(2x2) sulfur adsorbate-layer on Pd.
1979
Journal Article
Bradshaw, A.M. and M. Scheffler: Lateral interactions in adsorbed layers.
Journal Article
Hoffmann, P., C.v. Muschwitz, Karsten Horn, Karl Jacobi, Alexander M. Bradshaw, K. Kambe and Matthias Scheffler: Angular-resolved photoemission from an ordered oxygen overlayer on aluminium (111).
Journal Article
Kambe, K. and Matthias Scheffler: Theory of photoexcitation of adsorbates.
Journal Article
Scheffler, M.: The influence of lateral interactions on the vibrational spectrum of adsorbed CO.
Journal Article
Scheffler, Matthias, Karsten Horn, Alexander M. Bradshaw and Kyozaburo Kambe: Angular-resolved photoemission from physisorbed xenon.
1978
Journal Article
Horn, Karsten, Matthias Scheffler and Alexander M. Bradshaw: Photoemission from physisorbed xenon: Evidence for lateral interactions.
Journal Article
Scheffler, Matthias, Karsten Horn, Alexander M. Bradshaw and K. Kambe: Photoemission from physisorbed xenon.
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