Publications of M. Scheffler
All genres
Journal Article (592)
1987
Journal Article
and M. Scheffler: Mechanisms of defect pairing in semiconductors: A study for chalcogens in silicon.
1985
Journal Article
and M. Scheffler: No large lattice relaxations around the arsenic antisite in GaAs.
Journal Article
, and M. Scheffler: Electronic structure calculation of 3d-transition metal point defects in silicon.
Journal Article
, and Matthias Scheffler: Theoretical evidence for low-spin ground states of early interstitial and late substitutional 3d transition-metal ions in silicon.
Journal Article
, Matthias Scheffler, and : Identifiaction of chalcogen defects in silicon.
Journal Article
, M. Scheffler, and : Identification of chalcogen point-defects sites in silicon by total-energy calculations.
Journal Article
and M. Scheffler: Calculation of the Green's function for a crystal surface or interface.
Journal Article
, Matthias Scheffler and Werner Berndt: The adsorption of sulphur on Pd(111). I: A LEED analysis of the (sqrt{2} x sqrt{3}) R 30° adsorbate structure.
Journal Article
, and Matthias Scheffler: As_Ga-induced dichroism in GaAs.
Journal Article
Scheffler, M., , , , and : Chemical bonding and lattice relaxations of deep-level defects.
Journal Article
Scheffler, M., and : Total-energy gradients and lattice distortions at point defects in semiconductors.
1984
Journal Article
and M. Scheffler: Angle-resolved photoemission and the electronic structure of Pd(111).
Journal Article
, and M. Scheffler: Optical properties of As antisite and EL2 defects in GaAs.
Journal Article
Scheffler, Matthias, , and : Electronic structure and identification of deep defects in GaP.
1983
Journal Article
, , Matthias Scheffler and : Multivacancies, interstitials, and self-interstitial migration in Si.
Journal Article
, Matthias Scheffler and : Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors.
1982
Journal Article
, , and Matthias Scheffler: Electronic structure of deep sp-bonded impurities in silicon.
Journal Article
Scheffler, M., and : Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP.
Journal Article
and Matthias Scheffler: Determination of deep donor binding energies from their g-values.
1981
Journal Article
Scheffler, Matthias, , and : Identification and properties of native defects in GaP.