Publications of Matthias Scheffler
All genres
Journal Article (603)
2003
Journal Article
Reuter, Karsten and Matthias Scheffler: First-principles atomistic thermodynamics for oxidation catalysis: Surface phase diagrams and catalytically interesting regions.
Journal Article
Santoprete, Roberto, , , Peter Kratzer, and Matthias Scheffler: Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots.
Journal Article
, Jörg Neugebauer and Matthias Scheffler: Al(111)-(√3 x √3)R30: On-top versus substitutional adsorption for Rb and K.
Journal Article
Sun, Qiang, Karsten Reuter and Matthias Scheffler: Effect of a humid environment on the surface structure of RuO2(110).
Journal Article
Todorova, Mira, , , , , , , Jutta Rogal, Karsten Reuter, and Matthias Scheffler: The Pd(100)-(√5 x √5)R27º-O surface oxide revisited.
Journal Article
Wang, Jinhai, Chao Yang Fan, Qiang Sun, Karsten Reuter, Karl Jacobi, Matthias Scheffler and Gerhard Ertl: Surface coordination chemistry: Dihydrogen versus hydride complexes on RuO2(110).
Journal Article
Wang, Jinhai, Chao Yang Fan, Qiang Sun, Karsten Reuter, Karl Jacobi, Matthias Scheffler and Gerhard Ertl: Surface coordination chemistry: Dihydrogen versus hydride complexes on RuO2(110).
Journal Article
, and Matthias Scheffler: Adhesion of copper and alumina from first principles.
2002
Journal Article
Erwin, Steven C., Sung-Hoon Lee and Matthias Scheffler: First-principles study of nucleation, growth, and interface structure on Fe/GaAs.
Journal Article
, and Matthias Scheffler: A kinetic Monte Carlo investigation of island nucleation and growth in thin-film epitaxy in the presence of substrate-mediated interactions.
Journal Article
, , Peter Kratzer, and Matthias Scheffler: Quantum Monte Carlo calculations of H2 dissociation on Si(001).
Journal Article
Fuchs, Martin, Juarez Lopes Ferreira Da Silva, Catherine Stampfl, Jörg Neugebauer and Matthias Scheffler: Cohesive properties of group-III nitrides: A comparative study of all-electron and pseudopotential calculations using the generalized gradient approximation.
Journal Article
Ganduglia-Pirovano, M.Veronica, Karsten Reuter and Matthias Scheffler: Stability of subsurface oxygen at Rh(111).
Journal Article
Hedström, Magnus, Arno Schindlmayr and Matthias Scheffler: Quasiparticle Calculations for Point Defects on Semiconductor Surfaces.
Journal Article
Kratzer, Peter, Evgeni Penev and Matthias Scheffler: First-principles studies of kinetics in epitaxial growth of III-V semiconductors.
Journal Article
Kratzer, Peter and Matthias Scheffler: Reaction-limited island nucleation in molecular beam epitaxy of compound semiconductors.
Journal Article
, , , Matthias Scheffler and : Quantum theory of dissociative chemisorption on metal surfaces.
Journal Article
Lee, Seung Mi, Sung-Hoon Lee and Matthias Scheffler: Comment on "Anomalous mobility of strongly bound surface species: Cl on GaAs(001)-c(8x2)".
Journal Article
Li, Weixue, Catherine Stampfl and Matthias Scheffler: Oxygen adsorption on Ag(111): A density-functional theory investigation.
Journal Article
Pentcheva, Rossitza and Matthias Scheffler: Initial adsorption of Co on Cu(001): A first-principles investigation.