Publications of Karsten Horn

Journal Article (160)

2000
Journal Article
Rotenberg , Eli, W. Theis, Karsten Horn and P. Gille: Quasicrystalline valence bands in decagonal AlNiCo.
Journal Article
Wolfframm, D., D.A. Evans, Georg Neuhold and Karsten Horn: Gold and silver Schottky barriers on ZnS(110).
1999
Journal Article
Barman, Sudipto Roy and Karsten Horn: Photoemission study of electronic excitations at clean metal surfaces and thin metal films.
Journal Article
Baumgärtel, Peter, Jens Paggel, Markus Hasselblatt, Karsten Horn, V. Fernandez, Oliver Schaff, J.H. Weaver, Alexander M. Bradshaw, D.P. Woodruff, E. Rotenberg and J. Denlinger: Structure determination of the (√3×√3)R30° boron phase on the Si(111) surface using photoelectron diffraction.
1998
Journal Article
Barman, Sudipto Roy, S.A. Ding, Georg Neuhold, Karsten Horn, D. Wolfframm and D.A. Evans: Electronic band structure of zinc blende.
Journal Article
Barman, Sudipto Roy, P. Häberle and Karsten Horn: Collective and single-particle excitations in the photoyield spectrum of Al.
Journal Article
Barman, Sudipto Roy, Karsten Horn, P. Häberle, H. Ishida and A. Liebsch : Photoinduced plasmon excitations in alkali-metal overlayers.
Journal Article
Carbon, M., M.N. Piancastelli, J.J. Paggel, Chr. Weindel and Karsten Horn: A high-resolution photoemission study of ethanol adsorption on Si(111)-(7×7).
Journal Article
Magnusson, K.O., Georg Neuhold, Karsten Horn and D.A. Evans: Electronic band structure of cubic CdSe determined by angle-resolved photoemission: Cd 4d and valence-level states.
Journal Article
Moreno, M., H. Yang, M. Höricke, M. Alonso, J.A. Martín-Gago, R. Hey, Karsten Horn, J.L. Sacedón and K.H. Ploog: Si intralayers at GaAs/AlAs and GaAs/GaAs junctions: Polar versus nonpolar interfaces.
Journal Article
Neuhold, Georg, Sudipto Roy Barman, Karsten Horn, Wolfgang Theis, Philipp Ebert and Knut Urban: Enhanced surface metallic density of states in icosahedral quasicrystals.
Journal Article
Paggel, Jens, Georg Neuhold, Henrik Haak and Karsten Horn: Growth morphology and electronic structure of Na films on Si(111)-(7×7) and Si(111)-Na(3×1).
1997
Journal Article
Chassé, T., G. Neuhold, Jens Paggel and Karsten Horn: Investigation of the Sn/GaP(110) interface by core level photoemission: interface reaction, growth morphology and surface photovoltage effects.
Journal Article
Ding, S.A., Sudipto Roy Barman, Karsten Horn, H. Yang, B. Yang, O. Brandt and K. Ploog: Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy.
1996
Journal Article
Ding, S.A., Georg Neuhold, J.H. Weaver, P. Häberle, Karsten Horn, O. Brandt, H. Yang and K. Ploog: Electronic structure of cubic gallium nitride films grown on GaAs.
Journal Article
Drews, D., A. Schneider, Karsten Horn and D.R.T. Zahn: Raman monitoring of ternary compound formation: ZnSxSe1 − x on GaAs(100).
Journal Article
Neuhold, Georg, T. Chassé, Jens Paggel and Karsten Horn: Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning.
Journal Article
Schömann, S., K. Schmidt, H. Peisert, T. Chassé and Karsten Horn: Electronic and surfactant effects of As interlayers at AgInP (110) interfaces.
Journal Article
Wolfframm, D., P. Bailey, D.A. Evans, Georg Neuhold and Karsten Horn: Zinc sulfide on GaP(110): Characterization of epitaxial growth and electronic structure.
1994
Journal Article
Chassé, Th., Jens Paggel, Georg Neuhold, Wolfgang Theis and Karsten Horn: Photoemission study of the Cs⧸GaP(110) interface at low temperatures.
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