Publications of Karsten Horn

Chang, Y. J.; Khalsa, G.; Moreschini, L.; Walter, A. L.; Bostwick, A.; Horn, K.; MacDonald, A. H.; Rotenberg, E.: Uniaxial strain induced band splitting in semiconducting SrTiO₃. Physical Review B 87 (11), 115212 (2013)

Kim, K. S.; Walter, A. L.; Moreschini, L.; Seyller, T.; Horn, K.; Rotenberg, E.; Bostwick, A.: Coexisting massive and massless Dirac fermions in symmetry-broken bilayer graphene. Nature Materials 12 (10), pp. 887 - 892 (2013)

Walter, A. L.; Bostwick, A.; Speck, F.; Ostler, M.; Kim, K. S.; Chang, Y. J.; Moreschini, L.; Innocenti, D.; Seyller, T.; Horn, K. et al.; Rotenberg, E.: Small scale rotational disorder observed in epitaxial graphene on SiC(0001). New Journal of Physics 15 (2), 023019 (2013)

Martínez-Blanco, J.; Mascaraque, A.; Dedkov, Y.; Horn, K.: Ge(001) As a Template for Long-Range Assembly of π-Stacked Coronene Rows. Langmuir 28 (8), pp. 3840 - 3844 (2012)

Nayak, J.; Maniraj , M.; Rai , A.; Singh , S.; Rajput, P.; Gloskovskii, A.; Zegenhagen , J.; Schlagel , D. L.; Lograsso, T. A.; Horn, K. et al.; Barman , S. R.: Bulk Electronic Structure of Quasicrystals. Physical Review Letters 109 (21), 216403 (2012)

Ostler, M.; Koch, R. J.; Speck, F.; Fromm, F.; Vita, H.; Hundhausen, M.; Horn, K.; Seyller, T.: Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation. Materials Science Forum 717-720, pp. 649 - 652 (2012)

Sicot, M.; Leicht, P.; Zusan, A.; Bouvron, S.; Zander, O.; Weser, M.; Dedkov, Y.; Horn, K.; Fonin, M.: Size-Selected Epitaxial Nanoislands Underneath Graphene Moiré on Rh(111). ACS nano 6 (1), pp. 151 - 158 (2012)

Bostwick, A.; McChesney, J. L.; Ohta, T.; Emtsev, K. V.; Seyller, T.; Horn, K.; Rotenberg, E.: The interaction of Xe and Xe + K with graphene. Journal of Electron Spectroscopy and Related Phenomena 183 (1-3), pp. 118 - 124 (2011)

Böttcher, S.; Weser, M.; Dedkov, Y. S.; Horn, K.; Voloshina, E. N.; Paulus, B.: Graphene on ferromagnetic surfaces and its functionalization with water and ammonia. Nanoscale Research Letters 6, 214 (2011)

Dhaka, R. S.; Shukla, A. K.; Horn, K.; Barman, S. R.: Photoemission study of Al adlayers on Mn. Physical Review B 84 (24), 245404 (2011)

Voloshina, E. N.; Generalov, A. V.; Weser, M.; Böttcher, S.; Horn, K.; Dedkov, Y.: Structural and electronic properties of the graphene/Al/Ni(111) intercalation system. New Journal of Physics 13 (11), 113028 (2011)

Walter, A. L.; Bostwick, A.; Jeon, K.-J.; Speck, F.; Ostler, M.; Seyller, T.; Moreschini, L.; Chang, J. Y.; Polini, M.; Asgari, R. et al.; MacDonald, A. H.; Horn, K.; Rotenberg, E.: Effective screening and the plasmaron bands in Graphene. Physical Review B 84 (8), 085410 (2011)

Walter, A. L.; Jeon, K.-J.; Bostwick, A.; Speck, F.; Ostler, M.; Seyller, T.; Moreschini, L.; Kim, Y. S.; Chang, Y. J.; Horn, K. et al.; Rotenberg, E.: Highly p-doped epitaxial graphene obtained by fluorine intercalation. Applied Physics Letters 98 (18), 184102 (2011)

Walter, A. L.; Nie, S.; Bostwick, A.; Kim, K. S.; Moreschini, L.; Chang, J. Y.; Innocenti, D.; Horn, K.; McCarty, K. F.; Rotenberg, E.: Electronic structure of graphene on single-crystal copper substrates. Physical Review B 84 (19), 195443 (2011)

Weser, M.; Voloshina, E. N.; Horn, K.; Dedkov, Y. S.: Electronic structure and magnetic properties of the graphene/Fe/Ni(111) intercalation-like system. Physical Chemistry Chemical Physics 13 (16), pp. 7534 - 7539 (2011)

Bostwick, A.; Ohta, T.; McChesney, J. L.; Emtsev, K. V.; Speck, F.; Seyller, T.; Horn, K.; Kevan, S. D.; Rotenberg, E.: The interaction of quasi-particles in graphene with chemical dopants. New Journal of Physics 12, 125014 (2010)

Bostwick, A.; Speck, F.; Seyller, T.; Horn, K.; Polini, M.; Asgari, R.; MacDonald, A. H.; Rotenberg, E.: Observation of Plasmarons in Quasi-Freestanding Doped Graphene. Science 328 (5981), pp. 999 - 1002 (2010)

Chang, Y. J.; Bostwick, A.; Kim, Y. S.; Horn, K.; Rotenberg, E.: Structure and correlation effects in semiconducting SrTiO₃. Phyical Review B 81 (23), 235109 (2010)

Dil, J. H.; Hülsen, B.; Kampen, T. U.; Kratzer, P.; Horn, K.: Influence of the substrate lattice structure on the formation of quantum well states in thin In and Pb films on silicon. Journal of Physics: Condensed Matter 22 (13), 135008 (2010)

Enderlein, C.; Kim, Y. S.; Bostwick, A.; Rotenberg, E.; Horn, K.: The formation of an energy gap in graphene on ruthenium by controlling the interface. New Journal of Physics 12 (3), pp. 033014-1 - 033014-9 (2010)