Publications of Karsten Horn

Barman, S. R.; Stampfl, C.; Häberle, P.; Horn, K.: Photon-excited collective modes in a surface alloy. Physical Review B 61 (19), pp. 12721 - 12724 (2000)

Wolfframm, D.; Evans, D. A.; Neuhold, G.; Horn, K.: Gold and silver Schottky barriers on ZnS(110). Journal of Applied Physics 87 (8), pp. 3905 - 3911 (2000)

Casaletto, M. P.; Zanoni, R.; Carbone, M.; Piancastelli, M. N.; Aballe, L.; Weiss, K.; Horn, K.: High resolution photoemissionstudy of ethanol on Si(100)2x1. Surface Science 447 (1-3), pp. 237 - 244 (2000)

Barman, S. R.; Horn, K.: Photoemission study of electronic excitations at clean metal surfaces and thin metal films. Applied Physics A 69, pp. 519 - 527 (1999)

Baumgärtel, P.; Paggel, J.; Hasselblatt, M.; Horn, K.; Fernandez, V.; Schaff, O.; Weaver, J. H.; Bradshaw, A. M.; Woodruff, D. P.; Rotenberg, E. et al.; Denlinger, J.: Structure determination of the (√3×√3)R30° boron phase on the Si(111) surface using photoelectron diffraction. Physical Review B 59 (20), pp. 13014 - 13019 (1999)

Barman, S. R.; Ding, S. A.; Neuhold, G.; Horn, K.; Wolfframm, D.; Evans, D. A.: Electronic band structure of zinc blende. Physical Review B 58 (11), pp. 7053 - 7058 (1998)

Paggel, J.; Neuhold, G.; Haak, H.; Horn, K.: Growth morphology and electronic structure of Na films on Si(111)-(7×7) and Si(111)-Na(3×1). Surface Science 414 (1-2), pp. 221 - 235 (1998)

Carbon, M.; Piancastelli, M.N.; Paggel, J.J.; Weindel, C.; Horn, K.: A high-resolution photoemission study of ethanol adsorption on Si(111)-(7×7). Surface Science 412-413, pp. 441 - 446 (1998)

Barman, S. R.; Häberle, P.; Horn, K.: Collective and single-particle excitations in the photoyield spectrum of Al. Physical Review B 58 (8), pp. R4285 - R4288 (1998)

Neuhold, G.; Barman, S. R.; Horn, K.; Theis, W.; Ebert, P.; Urban, K.: Enhanced surface metallic density of states in icosahedral quasicrystals. Physical Review B 58 (2), pp. 734 - 738 (1998)

Moreno, M.; Yang, H.; Höricke, M.; Alonso, M.; Martín-Gago, J. A.; Hey, R.; Horn, K.; Sacedón, J. L.; Ploog, K. H.: Si intralayers at GaAs/AlAs and GaAs/GaAs junctions: Polar versus nonpolar interfaces. Physical Review B 57 (19), pp. 12314 - 12323 (1998)

Magnusson, K. O.; Neuhold, G.; Horn, K.; Evans, D. A.: Electronic band structure of cubic CdSe determined by angle-resolved photoemission: Cd 4d and valence-level states. Physical Review B 57 (15), pp. 8945 - 8950 (1998)

Barman, S. R.; Horn, K.; Häberle, P.; Ishida, H.; Liebsch , A.: Photoinduced plasmon excitations in alkali-metal overlayers. Physical Review B 57 (11), pp. 6662 - 6665 (1998)

Chassé, T.; Neuhold, G.; Paggel, J.; Horn, K.: Investigation of the Sn/GaP(110) interface by core level photoemission: interface reaction, growth morphology and surface photovoltage effects. Applied Surface Science 115 (4), pp. 326 - 335 (1997)

Ding, S. A.; Barman, S. R.; Horn, K.; Yang, H.; Yang, B.; Brandt, O.; Ploog, K.: Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy. Applied Physics Letters 70 (18), pp. 2407 - 2409 (1997)

Neuhold, G.; Chassé, T.; Paggel, J.; Horn, K.: Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning. Physical Review B 54 (12), pp. 8623 - 8626 (1996)

Schömann, S.; Schmidt, K.; Peisert, H.; Chassé, T.; Horn, K.: Electronic and surfactant effects of As interlayers at AgInP (110) interfaces. Surface Science 352-354, pp. 855 - 860 (1996)

Drews, D.; Schneider, A.; Horn, K.; Zahn, D.R.T.: Raman monitoring of ternary compound formation: ZnS_xSe_{1 − x} on GaAs(100). Journal of Crystal Growth 159 (1-4), pp. 152 - 155 (1996)

Ding, S. A.; Neuhold, G.; Weaver, J. H.; Häberle, P.; Horn, K.; Brandt, O.; Yang, H.; Ploog, K.: Electronic structure of cubic gallium nitride films grown on GaAs. Journal of Vacuum Science and Technology. A 14 (3), pp. 819 - 824 (1996)

Wolfframm, D.; Bailey, P.; Evans, D. A.; Neuhold, G.; Horn, K.: Zinc sulfide on GaP(110): Characterization of epitaxial growth and electronic structure. Journal of Vacuum Science and Technology A 14 (3), pp. 844 - 848 (1996)