Publications of Karsten Horn

McChesney, J. L.; Bostwick, A.; Ohta, T.; Seyller, T.; Horn, K.; Gonzalez, J.; Rotenberg, E.: Extended van Hove Singularity and Superconducting Instability in Doped Graphene. Physical review letters 104, 136803 (2010)

Martínez-Blanco, J.; Klingsporn, M.; Horn, K.: Selective adsorption of coronene on Si(1 1 1)-(7 × 7). Surface science 604 (5-6), pp. 523 - 528 (2010)

Dil, J. H.; Hülsen, B.; Kampen, T. U.; Kratzer, P.; Horn, K.: Influence of the substrate lattice structure on the formation of quantum well states in thin In and Pb films on silicon. Journal of Physics: Condensed Matter 22 (13), 135008 (2010)

Enderlein, C.; Kim, Y. S.; Bostwick, A.; Rotenberg, E.; Horn, K.: The formation of an energy gap in graphene on ruthenium by controlling the interface. New Journal of Physics 12 (3), pp. 033014-1 - 033014-9 (2010)

Weser, M.; Rehder, Y.; Horn, K.; Sicot, M.; Fonin, M.; Preobrajenski, A. B.; Voloshina, E. N.; Goering, E.; Dedkov, Y. S.: Induced magnetism of carbon atoms at the graphene/Ni(111) interface. Applied Physics Letters 96, pp. 012504-1 - 012504-3 (2010)

Bostwick, A.; McChesney, J. L.; Ohta, T.; Rotenberg, E.; Seyller, T.; Horn, K.: Experimental studies of the electronic structure of graphene. Progress in Surface Science 84 (11-12), pp. 380 - 413 (2009)

Shukla, A. K.; Dhaka, R. S.; D’Souza, S. W.; Maniraj, M.; Barman, S. R.; Horn, K.; Ebert, P.; Urban, K.; Wu, D.; Lograsso, T. A.: Manganese adlayers on i-Al-Pd-Mn quasicrystal: growth and electronic structure. Journal of Physics Condensed Matter 21, pp. 405005-1 - 405005-8 (2009)

Bostwick, A.; McChesney, J. L.; Emtsev, K. V.; Seyller, T.; Horn, K.; Kevan, S. D.; Rotenberg, E.: Quasiparticle Transformation during a Metal-Insulator Transition in Graphene. Physical Review Letters 103 (5), pp. 056404-1 - 056404-4 (2009)

Shukla, A. K.; Dhaka, R. S.; D’Souza, S. W.; Singh, S.; Wu, D.; Lograsso, T. A.; Krajčí, M.; Hafner, J.; Horn, K.; Barman, S. R.: Quasiperiodic layers of free-electron metals studied using electron diffraction. Physical Review B 79 (13), 134206 (2009)

Filleter, T.; McChesney, J. L.; Bostwick, A.; Rotenberg, E.; Emtsev, K. V.; Seyller, T.; Horn, K.; Bennewitz, R.: Friction and Dissipation in Epitaxial Graphene Films. Physical Review Letters 102 (8), 086102 (2009)

Ruiz-Osés, M.; Oteyza, D. G. d.; Fernández-Torrente, I.; González-Lakunza, N.; Schmidt-Weber, P. M.; Kampen, T. U.; Horn, K.; Gourdon, A.; Arnau, A.; Ortega, J. E.: Non-Covalent Interactions in Supramolecular Assemblies Investigated with Electron Spectroscopies. ChemPhysChem 10 (6), pp. 896 - 900 (2009)

Emtsev, K. V.; Bostwick, A.; Horn, K.; Jobst, J.; Kellogg, G. L.; Ley, L.; McChesney, J. L.; Ohta, T.; Reshanov, S. A.; Röhrl, J. et al.; Rotenberg, E.; Schmid, A. K.; Waldmann, D.; Weber, H. B.; Seyller, T.: Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nature Materials 8, pp. 203 - 207 (2009)

Cortes, R.; Mascaraque, A.; Schmidt-Weber, P.; Dil, H.; Kampen, T. U.; Horn, K.: Coexistence of Racemic and Homochiral Two-Dimensional Lattices Formed by a Prochiral Molecule: Dicarboxystilbene on Cu(110). Nano Letters 8 (12), pp. 4162 - 4167 (2008)

Moreno, M.; Kumar, A.; Tallarida, M.; Ney, A.; Ploog, K. H.; Horn, K.: Electronic signature of MnAs phases in bare and buried films grown on GaAs(001). Journal of Vacuum Science and Technology B 26 (4), pp. 1530 - 1533 (2008)

Seyller, T.; Bostwick, A.; Emtsev, K. V.; Horn, K.; Ley, L.; McChesney, J. L.; Ohta, T.; Riley, J. D.; Rotenberg, E.; Speck, F.: Epitaxial graphene: a new material. Physica Status Solidi B 245 (7), pp. 1436 - 1446 (2008)

Moreno, M.; Kumar, A.; Tallarida, M.; Horn, K.; Ney, A.; Ploog, K. H.: Electronic states in arsenic-decapped MnAs (11¯00) films grown on GaAs(001): A photoemission spectroscopy study. Applied Physics Letters 92 (8), 084103 (2008)

Tegenkamp, T.; Ohta, T.; McChesney, J. L.; Dil, H.; Rotenberg, E.; Pfnür, H.; Horn, K.: Coupled Pb Chains on Si(557): Origin of One-Dimensional Conductance. Physical Review Letters 100 (7), pp. 076802-1 - 076802-4 (2008)

Ohta, T.; El Gabaly, F.; Bostwick, A.; McChesney, J. L.; Emtsev, K. V.; Schmid, A. K.; Seyller, T.; Horn, K.; Rotenberg, E.: Morphology of graphene thin film growth on SiC(0001). New Journal of Physics 10, 023034 (2008)

Bostwick, A.; Emtsev, K. V.; Horn, K.; Huwald, E.; Ley, L.; McChesney, J. L.; Ohta, T.; Riley, J.; Rotenberg, E.; Speck, F. et al.; Seyller, T.: Photoemission studies of graphene on SiC: growth, interface, and electronic structure. Advances in Solid State Physics 47, pp. 159 - 170 (2008)

Rotenberg, E.; Bostwick, A.; Ohta, T.; McChesney, J. L.; Seyller, T.; Horn, K.: Origin of the energy bandgap in epitaxial graphene. Nature Materials 7, pp. 258 - 259 (2008)