Publications of Peter Kratzer

Penev, E.; Kratzer, P.; Scheffler, M.: Atomic structure of the GaAs(001)-c(4 x 4) surface: first-principles evidence for diversity of heterodimer motifs. Physical Review Letters 93 (14), pp. 146102-1 - 146102-4 (2004)

Márquez, J.; Kratzer, P.; Jacobi, K.: Structure and morphology of the As-rich and the stoichiometric GaAs(114)A surface. Journal of Applied Physics 95 (12), pp. 7645 - 7654 (2004)

Wu, H.; Hortamani, M.; Kratzer, P.; Scheffler, M.: First-principles study of ferromagnetism in epitaxial Si-Mn thin films on Si(001). Physical Review Letters 92, 23, pp. 237202-1 - 237202-4 (2004)

Penev, E.; Stojkovic, S.; Kratzer, P.; Scheffler, M.: Anisotropic diffusion of In adatoms on pseudomorphic In_xGa_1-xAs(001) films: First-principles total energy calculations. Physical Review B 69, pp. 115335-1 - 115335-10 (2004)

Santoprete, R.; Koiller, B.; Capaz, R. B.; Kratzer, P.; Liu, Q. K. K.; Scheffler, M.: Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots. Physical Review B 68, pp. 235311-1 - 235311-9 (2003)

Temko, Y.; Suzuki, T.; Kratzer, P.; Jacobi, K.: InAs quantum dots grown on the GaAs(113)A and GaAs(-1-1-3)B surfaces: A comparative STM study. Physical Review B 68 (16), pp. 165310-1 - 165310-12 (2003)

Kratzer, P.; Penev, E.; Scheffler, M.: Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations. Applied Surface Science 216 (1-4), pp. 436 - 446 (2003)

Geelhaar, L.; Temko, Y.; Márquez, J.; Kratzer, P.; Jacobi, K.: Surface structure of GaAs(2 5 11). Physical Review B 65 (15), pp. 155308-1 - 155308-13 (2002)

Filippi, C.; Healy, S. B.; Kratzer, P.; Pehlke, E.; Scheffler, M.: Quantum Monte Carlo calculations of H₂ dissociation on Si(001). Physical Review Letters 89 (16), 166102 (2002)

Kratzer, P.; Penev, E.; Scheffler, M.: First-principles studies of kinetics in epitaxial growth of III-V semiconductors. Applied Physics A 75, pp. 79 - 88 (2002)

Kratzer, P.; Scheffler, M.: Reaction-limited island nucleation in molecular beam epitaxy of compound semiconductors. Physical Review Letters 88 (3), 036102 (2002)

Kratzer, P.; Scheffler, M.: Surface Knowledge: Toward a Predictive Theory of Materials. Computing in Science & Engineering 3 (6), pp. 16 - 25 (2001)

Aballe, L.; Rogero, C.; Kratzer, P.; Gokhale, S.; Horn, K.: Probing interface electronic structure with overlayer quantum-well resonances: Al/Si(111). Physical Review Letters 87 (15), 156801 (2001)

Penev, E.; Kratzer, P.; Scheffler, M.: Effect of strain on surface diffusion in semiconductor heteroepitaxy. Physical Review B 64 (8), 085401 (2001)

Wang, L. G.; Kratzer, P.; Scheffler, M.; Liu, Q. K. K.: Island dissolution during capping layer growth interruption. Applied Physics A 73 (2), pp. 161 - 165 (2001)

Healy, S. B.; Filippi, C.; Kratzer, P.; Penev, E.; Scheffler, M.: The role of electronic correlation in the Si(100) reconstruction: a quantum Monte Carlo study. Physical Review Letters 87 (01), 016105 (2001)

Geelhaar, L.; Márquez, J.; Kratzer, P.; Jacobi, K.: GaAs(2511): A New Stable Surface within the Stereographic Triangle. Physical Review Letters 86 (17), pp. 3815 - 3818 (2001)

Márquez, J.; Kratzer, P.; Geelhaar, L.; Jacobi, K.; Scheffler, M.: Atomic structure of the stoichiometric GaAs(114) surface. Physical Review Letters 86 (1), pp. 115 - 118 (2001)

Wang, L. G.; Kratzer, P.; Scheffler, M.: Energetics of InAs Thin Films and Islands on the GaAs(001) Substrate. Japanese Journal of Applied Physics 39 (7B), pp. 4298 - 4301 (2000)

LaBella, V. P.; Bullock, D. W.; Ding, Z.; Emery, C.; Thibado, P. M.; Kratzer, P.; Scheffler, M.: A novel imaging mechanism to determine the atomic structure of the GaAs(001)-(2x4) surface. Omicron Newsletter 4, pp. 4 - 5 (2000)