Publications of Matthias Scheffler

Methfessel, M., B.K. Agrawal and M. Scheffler: The Influence of Structural Relaxation on the Valence-Band Offset at Semiconductor-Semiconductor Interfaces. Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) 989–992 (1990).

Vigneron, J.P., M. Scheffler, T. Laloyaux, I. Derycke and A.A. Lucas: Spatial Electron Current Distribution in a Scanning Tunneling Microscope. Vacuum 41, 745–746 (1990).

Beeler, F. and M. Scheffler: Calculation of total energies, reaction and diffusion processes of transition-metal point defects in silicon. Proc. Int. Conf. on the Physics of Semiconductors (ICPS-19) 983–986 (1989).

Beeler, F. and M. Scheffler: Theory of 4d-transition-metal ions in silicon: Total-energies, diffusion, electronic and magnetic properties. Mat. Sci. Forum 38-41, 257–262 (1989).

Biernacki, S. and M. Scheffler: Negative thermal expansion of diamond and zinc-blende semiconductors. Physical Review Letters 63, 290–293 (1989).

Biernacki, S., U. Scherz, R. Gillert and M. Scheffler: Calculated thermodynamic potentials for the vacancy and the oxygen a-center in silicon. Mat. Sci. Forum 38-41, 625–630 (1989).

Dabrowski, J. and M. Scheffler: The As_Ga-As_i pair in GaAs, the arsenic antisite and the properties of EL2. Proc. Int. Conf. on the Physics of Semiconductors (ICPS-19) 1023–1026 (1989).

Dabrowski, J. and M. Scheffler: The EL2 defect in GaAs. Mat. Sci. Forum 38-41, 51–58 (1989).

Dabrowski, J. and M. Scheffler: The isolated arsenic antisite defect in GaAs and the properties of EL2. Physical Review B 40, 10391–10401 (1989).

Overhof, H., M. Scheffler and C.M. Weinert: Computation of hyperfine interactions for substitutional Se^+ and S^+ impurities in silicon. Mat. Sci. Forum 38-41, 293–298 (1989).

Overhof, H., M. Scheffler and C.M. Weinert: Ab-initio calculations of hyperfine fields for chalcogen point defects and defect pairs in silicon: Identification of the pair atomic structure. Materials Science and Engineering B 4, 315–319 (1989).

Scheffler, M.: Chemical binding, stability and metastability of defects in semiconductors. Festkörperprobleme 29, 231–250 (1989).

Scherz, U., D. Weider and M. Scheffler: Electronic and vibrational properties of deep centers in semiconductors. Egyp. J. Sol. 12, 1 (1989).

Weider, D., M. Scheffler and U. Scherz: Parameter-free calculations of the pressure dependence of impurity levels, entropies and of defect-formation volumes. Mat. Sci. Forum 38-41, 299–304 (1989).

Dabrowski, J. and M. Scheffler: Ab-initio calculations for native point defects in GaAs. Proc. 5th Conf. on Semi-Insulating III-V Materials 37–42 (1988).

Dabrowski, J. and M. Scheffler: The EL2 defect in GaAs. Proc. 8th Int. School on Defects in Crystals 425–430 (1988).

Dabrowski, J. and M. Scheffler: Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2. Physical Review Letters 60, 2183–2186 (1988).

Máca, F. and M. Scheffler: Calculation of electronic structure for a crystal surface or interface. Proc. 4th Symposium on Surface Physics 221–224 (1988).

Máca, F. and M. Scheffler: Surface Green's function for a rumpled crystal surface. Comput. Phys. Commun. 51, 381–390 (1988).

Said, M., F. Máca, K. Kambe, M. Scheffler and N.E. Christensen: Electronic structure of fcc and bcc close-packed silver surfaces. Physical Review B 38, 8505–8507 (1988).