Publications of Matthias Scheffler

Gonze, X., R. Stumpf and M. Scheffler: Analysis of fully separable potentials. Physical Review B 44, 8503–8513 (1991).

Hebenstreit, J., M. Heinemann and M. Scheffler: Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes. Physical Review Letters 67, 1031–1034 (1991).

Methfessel, M., D. Hennig, S. Weber and M. Scheffler: Ab-initio calculation of the effect of d-band occupation on the relaxation of transition metal surfaces. Proc. 75th We-Heraeus-Seminar and 21st Annual Internat. Symposium on Electronic Structure of Solids 174–176 (1991).

Methfessel, M. and M. Scheffler: Full-potential LMTO calculations for atomic relaxations at semiconductor-semiconductor interfaces. Physica B 172, 175–183 (1991).

Overhof, H., M. Scheffler and C.C. Weinert: Formation energies, electronic structure, and hyperfine fields of chalcogen point defects and defect pairs in silicon. Physical Review B 43, 12494–12506 (1991).

Scheffler, M., C. Droste, A. Fleszar, F. Máca, G. Wachutka and G. Barzel: A self-consistent surface-Green-function (SSGF) method. Physica B 172, 143–153 (1991).

Schmalz, A., S. Aminpirooz, L. Becker, J. Haase, J. Neugebauer, M. Scheffler, D.R. Batchelor, D.L. Adams and E. Bogh: Unusual chemisorption geometry of Na on Al(111). Physical Review Letters 67, 2163–2166 (1991).

Caldas, M.J., J. Dabrowski, A. Fazzio and M. Scheffler: Anion-antisite-like defects in III-V compounds. Physical Review Letters 65 (16), 2046–2049 (1990).

Doyen, G., E. Koetter, J.P. Vigneron and M. Scheffler: Theory of scanning tunneling microscopy. Applied Physics A 51, 281–288 (1990).

Gonze, X., P. Käckell and M. Scheffler: Ghost states for separable, norm-conserving, ab initio pseudopotentials. Physical Review B 41 (17), 12264–12267 (1990).

Beeler, F., O.K. Andersen and M. Scheffler: Electronic and Magnetic Structure of 3d-Transition-Metal Point Defects in Silicon Calculated from First Principles. Physical Review B 41, 1603–1624 (1990).

Biernacki, S. and M. Scheffler: First-principles calculations of thermodynamic potentials of perfect-crystal semiconductors and for defects in semiconductors. Proc. 4th Brazilian School of Semiconductor Physics 188–198 (1990).

Caldas, M.J., J. Dabrowski, A. Fazzio and M. Scheffler: Anion-Antisite-like Defects in III-V Compounds. Proc.20th Int. Conf. on the Physicsof Semiconductors (ICPS-20) 469–472 (1990).

Caldas, M.J., J. Dabrowski, A. Fazzio and M. Scheffler: Anion-Antisite-like Defects in III-V Compounds. Physical Review Letters 65 (16), 2046–2049 (1990).

Caldas, M.J., A. Fazzio, J. Dabrowski and M. Scheffler: Anion-Antisite Defects in GaAs: As and Sb. Internat. Journal of Quantum Chemistry: Quantum Chemistry Symposium 24, 563–567 (1990).

Dabrowski, J., M. Scheffler and R. Strehlow: Silicon Donor in Gallium Arsenide and its Relation to DX Centers. Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) 489–492 (1990).

Doyen, G., E. Koetter, J.P. Vigneron and M. Scheffler: Theory of Scanning Tunneling Microscopy. Applied Physics A: Materials Science and Processing 51, 281–288 (1990).

Gonze, X., P. Käckell and M. Scheffler: Ghost States for Separable, Norm-Conserving, Ab-Initio Pseudopotentials. Physical Review B 41, 12264–12267 (1990).

Hebenstreit, J., M. Heinemann and M. Scheffler: Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs(110). Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) 215–218 (1990).

Hebenstreit, J., M. Heinemann and M. Scheffler: Calculated Surface Geometries and Electronic Structures for Clean and Sodium Covered GaAs(110) Surfaces. Extended Abstract: Electronic, Optical and Device Properties of Layered Structures 21, 71–75 (1990).